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  • 1
    Electronic Resource
    Electronic Resource
    Controlled lateral manipulation of single molecules with the scanning tunneling microscope (1995)
    Springer
    Applied physics 60 (1995), S. 343-345 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 68.35.Bs
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract. We report on the first successful lateral manipulation of molecules and controlled formation of nanostructures with the Scanning Tunneling Microscope (STM) at temperatures above 4 K as used by Eigler and collaborators. Among the first structures, we built the letters F and U forming the logo of our university at 30 K with CO molecules on a Cu(211) substrate. Our method to manipulate the molecules is analogous to that employed successfully up to now only by Eigler and co-workers. First experiences concerning the manipulation of the CO molecules on the highly anisotropic substrate are presented and the crucial role of the tip composition in imaging the CO molecules is demonstrated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01538415
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  • 2
    Electronic Resource
    Electronic Resource
    Helium scattering structure analyses of the chemisorbed hydrogen phases on Co(101¯0) (2000)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 113 (2000), S. 8283-8289 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The adsorption of hydrogen on the Co(101¯0) surface has been studied by means of helium atom scattering. In agreement with previous results, three ordered adsorbate structures have been identified at 85 K: a c(2×4)4H, a (2×1)p2mg, and a (1×2) saturation phase. The surface structures were determined from a quantitative analysis of the corresponding He-diffraction spectra. The corrugation functions derived from the calculations reveal that in the c(2×4)4H phase the hydrogen atoms from zigzag and zagzig chains along every second close-packed row of the substrate, although the kind of occupied threefold sites cannot be determined from our data. In the (2×1)p2mg phase, hydrogen atoms are found to occupy the hcp-like sites, whereas the substrate's reconstruction in the (1×2) phase is of the pairing-row type. This means that hydrogen forms analogous structures on the Co(101¯0) rather than on the structurally similar Ni(110) surface. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1311974
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  • 3
    Electronic Resource
    Electronic Resource
    Low-temperature scanning tunneling microscopy study of nucleation, percolation, and growth of ultrathin Ag films on Si(111)7×7 (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 3560-3562 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the growth of ultrathin Ag films on Si(111)7×7 between 80–100 K with low-temperature scanning tunneling microscopy. Nucleation of Ag in both halves of the 7×7 is observed. Corner holes and dimer sites are not occupied. Percolation occurs at submonolayer coverage through contact between the nucleated 2D Ag islands. This results in a honeycomb random site percolation problem. Upon completion of the first monolayer, 2D layer-like growth is observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111197
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  • 4
    Electronic Resource
    Electronic Resource
    A novel ultrahigh vacuum scanning tunneling microscope for surface science studies (1990)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 61 (1990), S. 1480-1483 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A novel design of a scanning tunneling microscope (STM) for surface science studies is described. The STM is fully compatible with ultrahigh vacuum (UHV) and offers the possibility of performing individual STM scans over a large region of the sample surface ((approximately-equal-to)10 mm2). The sample coarse approach is realized by a fine pitch screw, which shifts two wedges against each other. In order to incorporate the STM in an UHV system for the standard preparation and analyzing techniques of surface science, a special sample holder and sample transfer system has been developed. For defined heating of the sample, disconnectable electrical wiring for both a resistively heated oven and a thermocouple has been integrated within the sample holder.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1141156
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  • 5
    Electronic Resource
    Electronic Resource
    Film growth studies with intrinsic stress measurement: Polycrystalline and epitaxial Ag, Cu, and Au films on mica(001) (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 3081-3087 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Growth and microstructure of thin Ag, Cu, and Au films ultrahigh vacuum deposited onto single-crystalline mica(001) have been studied in situ by intrinsic stress measurements (ISM) and low-energy electron diffraction. Depending on the respective substrate temperature, three different modes of Vollmer–Weber (VW) growth can be clearly distinguished by ISM: (i) VW-type nucleation and subsequent columnar grain growth at low temperatures (110 K) where grain-boundary relaxation is the prevailing stress contribution, (ii) polycrystalline VW mode in a medium temperature range that is characterized by VW-type nucleation and grain growth in the continuous film and dominated by the capillarity stress, and (iii) epitaxial VW growth mode at temperatures above 470 K for Ag and 600 K for Cu and Au; here a novel stress mechanism due to the formation of "single-crystalline grain boundaries'' appears during the network stage.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349313
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  • 6
    Electronic Resource
    Electronic Resource
    Controlled vertical manipulation of single CO molecules with the scanning tunneling microscope: A route to chemical contrast (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 213-215 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A reliable procedure for controlled vertical transfer of single CO molecules between a Cu(111) surface and a scanning tunneling microscope tip and vice versa is demonstrated. It is shown that with a tip having a single CO molecule at its apex, chemical contrast is achieved allowing distinction of adsorbed CO molecules and oxgen atoms, which look very similar to the bare metal tip. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119503
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  • 7
    Electronic Resource
    Electronic Resource
    Morphology of strained epitaxial Fe films on Cu(311) (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 155-157 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Heteroepitaxial growth of Fe on the asymmetrical Cu(311) surface leads to (211)-oriented strained bcc films with a highly anisotropic morphology. In the initial stage the evolution of pseudomorphic Fe islands is observed: anisotropic lateral stress induces the formation of a regular array of Fe patches with a periodic separation. With proceeding growth, the overlayer transforms to bcc structure by means of dislocations introduced along the direction of dominant stress. The topography of the resulting bcc film corresponds to a regular faceted structure whose periodicity is determined by the arrangement of pseudomorphic islands formed in the initial stage of growth. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116905
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  • 8
    Electronic Resource
    Electronic Resource
    Intrinsic stress of Ag and Au electrical contact films for high temperature superconductor thin films (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 279-281 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films of the noble metals Ag and Au are prospective candidates for application as electrical contacts in high temperature superconductor (HTSC) thin film devices. We present first results on intrinsic stress in Ag and Au films measured during and after their UHV deposition onto YBa2Cu3O7−x thin film substrates. At 110 K film growth proceeds by columnar grain growth with tensile stresses as huge as the tensile strength of the bulk phase. At room temperature and up to 600 K the films grow via island growth developing much smaller film stress. At temperatures above 550 K a compressive stress contribution due to interdiffusion of oxygen from the HTSC substrates into the contact films is observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107937
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  • 9
    Electronic Resource
    Electronic Resource
    Ag-induced multistep formation on Si(001) (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2185-2187 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The step topography of 4°-misoriented Si(001) surfaces was examined by scanning tunneling microscopy and spot profile analyzing–low-energy electron diffraction. The clean Si(001)-(2×1) surface proves to be a single domain substrate, which is characterized by a regular array of double steps. This step structure is changed dramatically upon adsorption of submonolayer quantities of Ag at ∼700 K. In this case, the formation of multisteps with fourfold, sixfold, and eightfold step heights occurs. The single domain character of the substrate is preserved, now showing a Ag-induced (3×2) reconstruction. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115097
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  • 10
    Electronic Resource
    Electronic Resource
    The influence of oxygen on intrinsic stress and growth of iron and nickel films (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1072-1074 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Growth and microstructure of UHV-deposited thin films of Fe and Ni−two metals used in magnetic storage technology−have been investigated with intrinsic stress measurement. Fe exhibits tensile film forces typical of columnar grain growth. At oxygen partial pressure higher than 5×10−9 hPa the films incorporate oxygen leading to an increasing compressive stress contribution; at 2×10−7 hPa a magnetic oxide film is deposited. Ni exhibits film forces characteristic of pronounced island growth which gradually transform to the ones indicating columnar grain growth at oxygen pressures above 1×10−9 hPa; at 1×10−6 hPa a transparent oxide film is deposited.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106348
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