# ALBERT

## All Library Books, journals and Electronic Records Telegrafenberg

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• 1
Electronic Resource
Amsterdam : Elsevier
ISSN: 0168-9002
Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
Topics: Physics
Type of Medium: Electronic Resource
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• 2
Electronic Resource
Amsterdam : Elsevier
Physica B+C 150 (1988), S. 80-85
ISSN: 0378-4363
Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
Topics: Physics
Type of Medium: Electronic Resource
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• 3
Electronic Resource
Amsterdam : Elsevier
ISSN: 0921-4534
Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
Topics: Physics
Type of Medium: Electronic Resource
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• 4
Electronic Resource
Springer
Computational mechanics 13 (1993), S. 189-203
ISSN: 1432-0924
Source: Springer Online Journal Archives 1860-2000
Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes: Abstract The fatigue growth of multiple cracks, of arbitrary lengths, emanating from a row of fastener holes in a bonded, riveted, lap joint in a pressurized aircraft fuselage is studied. The effects of residual stresses due to a rivet misfit, and of plastic deformation near the hole, are included. A Schwartz-Neumann alternating method which uses the analytical solution for a row of multiple colinear cracks in an infinite sheet (the crack-faces being subject to arbitrary tractions), is developed to analyze this MSD problem on a personal computer. It is found that for a range of crack lengths, a phenomena wherein the shorter cracks may grow faster than longer cracks may exist.
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• 5
Electronic Resource
Springer
Applied physics 58 (1994), S. 125-128
ISSN: 1432-0630
Keywords: 78.30.Fs ; 68.55Nq ; 81.15.Cd
Source: Springer Online Journal Archives 1860-2000
Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
Notes: Abstract The crystalline formation of CuInSe2 thin films has been investigated using micro-Raman spectroscopy and AES composition analysis. It is confirmed that the Raman peaks are stongly dependent on the surface morphology and the Cu:In:Se ratio. In the films annealed at 315°C, crystalline grains larger than 2 μm show Raman peaks at 174 cm−1 and 258 cm−1. The In content is very low and the Cu:Se ratio is about 1:1 in these grains. The low In concentration is thought to be due to the formation of In2O3 on the surface. On the other hand, random structures of 1–2 μm grains found in films annealed at temperatures below 305°C show peaks at 174 cm−1 and 186 cm−1 instead of 258 cm−1 and have a Cu:In:Se ratio of 1:1:3–4. Thus the 186 cm−1 peak is thought to be related to a Cu, In-deficient phase when compared to stoichiometric CuInSe2. The optimum annealing condition was found by analyzing the Raman spectra and composition of different crystalline CuInSe2 grains. Films annealed under this condition exhibited a clear Raman peak at 174 cm−1 and consisted of clusters of crystals less than 1 μm in size.
Type of Medium: Electronic Resource
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• 6
Electronic Resource
Springer
Applied physics 59 (1994), S. 617-621
ISSN: 1432-0630
Keywords: 78.30.Fs ; 68.55.Nq ; 61.70.At
Source: Springer Online Journal Archives 1860-2000
Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
Notes: Abstract Various spots in GaAs, In-diffused with the 1.064 μm line of pulsed Nd:YAG laser with several energy densities, have been characterized and compared with samples prepared by the conventional rapid thermal annealing method. Of the energy densities used, the spot processed with an energy density of 7 J/cm2 shows In x Ga1−x As phases with an indium concentration of 60% and below. An abrupt boundary in the indium concentration is observed at the edge of the laser-annealed spot. The diffusion depth is found to be less than 1000 Å. The spot processed with an energy density of 14 J/cm2 shows considerable damage from the irradiation resulting in strain in the lattice. The samples prepared by the thermal annealing method show similar results to the laser-diffused samples. However, these thermally annealed samples suffer from arsenic loss unlike the laser-processed samples. It can be concluded that laser-induced alloying of indium into GaAs can be achieved with less arsenic loss than the thermal annealing method.
Type of Medium: Electronic Resource
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• 7
Electronic Resource
Springer
Computational mechanics 10 (1992), S. 169-201
ISSN: 1432-0924
Source: Springer Online Journal Archives 1860-2000
Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes: Abstract In this paper, the problems of composite-patch repair of (i) center and edge-cracked panels loaded in the far-field; and (ii) cracks emanating from pin-loaded fastener holes, are examined in thorough detail. The effects of various non-dimensional design parameters on the reduction in the stress-intensity factors near the crack-tip are determined, and are presented in the form of design charts. Both analytical and numerical methods are employed in this study. In the analytical method, the cracked metallic plate was considered to be infinitely large, and the composite patch was modeled as a long orthotropic strip of finite height (in the direction perpendicular to the crack axis). Next, by using the Finite Element Alternating Method (FEAM), a more general analysis capability that can treat arbitrary shapes of the cracked metallic sheet, as well as of the composite patches, is developed. This general FEAM is applied to: (i) composite patch repairs of cracks emanating from loaded fastener holes (the MSD problem); (ii) composite patch repairs of semi-elliptical surface flaws in thick plates; and (iii) composite patch repairs of quarter-elliptical surface flaws emanating from fastener holes. Problem (i) is two-dimensional in nature while problems (ii) and (iii) are fully three-dimensional. In all these cases, the effects of various design parameters on the crack-tip (front) stress-intensity factors are fully discussed.
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• 8
Electronic Resource
Springer
Computational mechanics 21 (1998), S. 477-482
ISSN: 1432-0924
Source: Springer Online Journal Archives 1860-2000
Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes: Abstract The finite element alternating method is extended further for analyzing multiple arbitrarily curved cracks in an isotropic plate under plane stress loading. The required analytical solution for an arbitrarily curved crack in an infinite isotropic plate is obtained by solving the integral equations formulated by Cheung and Chen (1987a, b). With the proposed method several example problems are solved in order to check the accuracy and efficiency of the method. Curved cracks emanating from loaded fastener holes, due to mixed mode fatigue crack growth, are also analyzed. Uniform far field plane stress loading on the plate and sinusoidally distributed pin loading on the fastener hole periphery are assumed to be applied. Small cracks emanating from fastener holes are assumed as initial cracks, and the subsequent fatigue crack growth behavior is examined until long arbitrarily curved cracks are formed near the fastener holes under mixed mode loading conditions.
Type of Medium: Electronic Resource
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• 9
Electronic Resource
Springer
The European physical journal 25 (2002), S. 615-622
ISSN: 1434-6052
Source: Springer Online Journal Archives 1860-2000
Topics: Physics
Notes: Abstract. We consider the gluino-mediated SUSY contributions to B0 - $\overline{B^0}$ mixing, $B\rightarrow J/\psi K_s$ and $B\rightarrow X_d \gamma$ in the mass insertion approximation. We find that the (LL) mixing parameter can be as large as $\vert (\delta_{13}^d)_{\mathrm {{LL}}} \vert \lesssim 2 \times 10^{-1}$ , but the (LR) mixing is strongly constrained by the $B\rightarrow X_d \gamma$ branching ratio and we find $\vert (\delta_{13}^d)_{\mathrm {{LR}}} \vert \lesssim 10^{-2}$ . The implications for the direct CP asymmetry in $B\rightarrow X_d \gamma$ and the dilepton charge asymmetry (All) are also discussed, where substantial deviations from the standard model (SM) predictions are possible.
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• 10
Electronic Resource
Springer
Cellular and molecular life sciences 54 (1998), S. 158-166
ISSN: 1420-9071
Keywords: Key words. Insulin-like growth factors; IGFs; IGFBP; stroma; epithelium; stromal-epithelial interactions.
Source: Springer Online Journal Archives 1860-2000
Topics: Biology , Medicine
Notes: Abstract. To determine if intestinal stromal cells secrete diffusible factors such as insulin-like growth factors (IGFs) capable of regulating epithelial cell growth in vitro, stromal cells were isolated by enzymatic digestion of rat intestine. Incorporation of [3H]thymidine into DNA and [14C]leucine into protein of IEC-6 cells, a model intestinal epithelial cell line, was significantly increased (two- to threefold) when the IEC-6 cells were co-cultured with stromal cells, relative to IEC-6 cells grown alone. Medium conditioned by stromal cells stimulated DNA synthesis of IEC-6 cells in a dose-dependent manner. Analysis of the conditioned medium revealed that intestinal stromal cells secreted IGF-I, but little IGF-II, in addition to an M r 32,000 IGF-binding protein (IGFBP-2) and an IGFBP having M r∼ 24,000. We conclude that rat intestinal stromal cells secrete one or more diffusible factors, which may include IGF-I and IGFBPs, capable of stimulating proliferation of IEC-6 cells in vitro.
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