ISSN:
1662-9779
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Physics
Notes:
We have investigated selective deposition of Co thin films on the OTS-patterned glasssurface by using μ-CP(Micro-Contact Printing) coupled with MOCVD(Metal Organic ChemicalVapor Deposition) method with Co2(CO)8 as a Co precursor. Co thin films in the thickness of 5-180nm has been selectively formed on the glass surface in the presence of the OTS(Octadecyltrichlrosilane)monolayer at the temperatures 60-90[removed info], at the pressure of 0.03-0.6 Torr. The self-assembledOTS monolayer on the surface passivates the surface hydroxyl(-OH), adsorption sites for Coprecursors, and thus significantly increases the induction period to nucleate Co metals on the OTSmonolayer, compared with on the bare glass. Lowering the temperature and the processing pressure islikely to increase the difference in the induction period for the two substrate surfaces and thusimproves the selectivity. About 180 nm-thick Co thin film was selectively formed on theOTS-patterned glass at 70[removed info], however, lowering the temperature to 60[removed info] decreased the thickness,which is attributed to the reduced growth rate of Co at the lower temperature. The Co thin filmsdeposited at 60-90[removed info] and at 0.03-0.6 Torr have the resistivities of 10-20 μ4-cm and are free ofcontamination. Consequently, the low temperature process for the selective deposition of Co in thepresence of the OTS monolayer can be utilized for a variety of applications including flexibleelectronics and semiconductor devices
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/23/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.124-126.531.pdf
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