ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
This paper reports on the fabrication and testing of 6H-SiC junction field effect transistors(JFETs) and a simple differential amplifier integrated circuit that have demonstrated 2000 hours ofelectrical operation at 500 °C without degradation. The high-temperature ohmic contacts, dielectricpassivation, and packaging technology that enabled such 500 °C durability are briefly described. KeyJFET parameters of threshold voltage, on-state resistance, transconductance, and on-state current, aswell as the gain of the differential amplifier integrated circuit, exhibited less than 7% change over thefirst 2000 hours of 500 °C operational testing
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/20/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.600-603.1079.pdf
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