Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
80 (2002), S. 1592-1594
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We have grown (InyGa1−y)1−xMnxAs ferromagnetic semiconductor layers with Mn composition of x up to 0.13 on InP substrates by molecular beam epitaxy. Near the lattice-matched composition, i.e., y∼0.53, the Curie temperature increases linearly with the ferromagnetically effective Mn composition xeff, following the empirical equation TC=1300×xeff. We obtained Curie temperatures above 100 K when x is relatively high (x〉0.1; xeff≥0.08) and the hole concentration is of the order of 1019 cm−3. © 2002 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1457526
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