Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
62 (1987), S. 3747-3750
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Interface reaction between Ni thin film and bulk SiC during heat treatment was investigated by MeV ion backscattering spectrometry using resonance scattering of helium-carbon, x-ray diffraction, and Auger electron spectroscopy (AES). Polycrystalline nickel-silicide, Ni2Si, was formed by heat treatment at 600 °C in forming gas. Carbon compounds were not detected in the reaction products. Carbon was distributed uniformly with a concentration of about 25 at. % in the reacted film, and the C KLL line shape of AES in the reaction products as similar to that of elementary carbon.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.339259
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