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  • 1
    Electronic Resource
    Electronic Resource
    Synthesis and characterization of nearly monodisperse CdE (E = sulfur, selenium, tellurium) semiconductor nanocrystallites (1993)
    s.l. : American Chemical Society
    Journal of the American Chemical Society 115 (1993), S. 8706-8715 
    Details
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ja00072a025
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  • 2
    Electronic Resource
    Electronic Resource
    Stark spectroscopy of CdSe nanocrystallites: The significance of transition linewidths (1995)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 103 (1995), S. 5236-5245 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We use Stark spectroscopy to examine the nature of the excited states of CdSe nanocrystallites. The Stark spectra we obtain are in the small coupling limit in which the changes induced by the electric field to the absorption spectrum are small compared to the transition linewidths. Within this limit, we theoretically examine the dependence of the line shape of Stark difference spectra on the linewidth of the transitions involved. For systems such as CdSe nanocrystallites, which have overlapping transitions coupled by the electric field, we find that the usual association of derivatives of absorption features with dipole moments and polarizabilities is problematic. We show that the Stark absorption spectrum of the CdSe nanocrystallites can be explained by polarizable and delocalized nonpolar excited states. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.470559
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  • 3
    Electronic Resource
    Electronic Resource
    Structure in the lowest absorption feature of CdSe quantum dots (1995)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 103 (1995), S. 5260-5268 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We use transient differential absorption experiments to investigate the "single dot'' absorption line shape of CdSe quantum dots. We observe both a narrow (full width half maximum ∼5 meV) and a broad (∼50 meV) bleach component within the inhomogeneously broadened first absorption line of our samples. We deduce the single dot absorption line shape which is most consistent with the experimental results. This line shape, which contains structure in the lowest quantum dot absorption feature, explains the large "Stokes'' shift seen in the full band edge luminescence of CdSe quantum dots. We discuss the structure within the context of several competing models. The data appear inconsistent with models which use surface states to explain the anomalous emission behavior of II–VI quantum dots. Instead they imply that exciton fine structure is observed in our samples. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.470561
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  • 4
    Electronic Resource
    Electronic Resource
    Investigation of nanoscale Ge segregation in p-channel SiGe/Si field effect transistor structures by electron energy loss imaging (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 7183-7185 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: SiGe/Si p-channel heteroepitaxial field effect transistor test structures in Si were fabricated by molecular beam epitaxy. Combined high-resolution transmission electron microscopy and energy-loss filtered imaging have been used to quantitatively determine the nanoscale Ge distribution across the SiGe alloy channel. The alloy grading at the edges of the channel has been found to be asymmetrical due to Ge segregation, with an exponential-like extended distribution directed towards the surface. The results agree well with the predictions of segregation theory and indicate that the concentration of Ge in the extended distribution lay in the range 10%–1% over a distance of several nanometers from the body of the channel. Secondary ion mass spectrometry measurements upon the same samples were insensitive to this short range extended Ge distribution. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371810
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  • 5
    Electronic Resource
    Electronic Resource
    Single-domain spectroscopy of self-assembled photonic crystals (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 1627-1629 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We show how optical microscopy can be used to study the optical properties of a single crystalline domain in a self-assembled photonic crystal. By measuring spatially resolved reflection and emission spectra from a synthetic opal, inhomogeneities due to averaging over inherent disorder can be avoided. From "defect-free" reflection and emission spectra, the intrinsic photonic band structure can be extracted and inhibition of spontaneous emission can be verified. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126117
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  • 6
    Electronic Resource
    Electronic Resource
    Excitation of a single molecule on the surface of a spherical microcavity (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 297-299 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We use the optical resonance of a spherical microcavity (quality factor ∼106) to excite a single molecule. By attaching a p-terphenyl crystal doped with pentacene and terrylene molecules to a dielectric sphere, we detect individual molecules excited by the near field of the cavity. A low-temperature optical microscope is utilized to image the emission from the single molecule, determine its position on the sphere surface, and measure its absorption linewidth. These results demonstrate the feasibility of single-molecule cavity quantum electrodynamics. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119554
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  • 7
    Electronic Resource
    Electronic Resource
    Structure of Abraded Surfaces (1948)
    [s.l.] : Nature Publishing Group
    Nature 162 (1948), S. 71-72 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] THE importance of surface conditions in the fatigue of metals and alloys has led to an investigation in this Laboratory into the effect of abrasion on the hardness and microstructure of surface and subsurface layers. Hardness measurements were made with a 'Tukon' microhardness tester and ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/162071a0
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  • 8
    Electronic Resource
    Electronic Resource
    Surface electronic properties of CdSe nanocrystallites (1993)
    Springer
    The European physical journal 26 (1993), S. 361-363 
    Details
    ISSN: 1434-6079
    Keywords: 73.20.Dx ; 73.20.At ; 63.20.Kr
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The surface electronic properties of CdSe nanocrystallites have been probed using low temperature and Zeeman spectroscopies. Fluorescence line narrowed spectra show dramatic changes between 1.75 and 10 K and also as a function of applied magnetic field. These effects are attributed to the localization of the photogenerated charge carriers on the surface. A simple model has been constructed to calculate the charge distribution within the nanocrystallite.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01429195
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  • 9
    Electronic Resource
    Electronic Resource
    Size dependent optical spectroscopy of II–VI semiconductor nanocrystallites (quantum dots) (1993)
    Springer
    The European physical journal 26 (1993), S. 355-357 
    Details
    ISSN: 1434-6079
    Keywords: 36.40.+d ; 73.20.Dx ; 63.20.Dj
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract We use low temperature (10K) optical hole-burning and fluorescence line narrowing spectroscopy to investigate the electronic properties of CdSe nanocrystallites (quantum dots) as a function of crystallite diameter (20–80Å). We discuss how the homogeneous linewidth of the HOMO-LUMO transition, the energy shift between the absorbing and emitting state, and the LO phonon frequency vary with nanocrystallite size.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01429193
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  • 10
    Electronic Resource
    Electronic Resource
    Synthesis and structural characterization of II–VI semiconductor nanocrystallites (quantum dots) (1993)
    Springer
    The European physical journal 26 (1993), S. 231-233 
    Details
    ISSN: 1434-6079
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract A methodology for the production of II–VI semiconductor nanocrystallites employing organometallic precursors has been developed. The rapid pyrolysis of reagents in a coordinating solvent provides temporally discrete nucleation. Subsequent controlled growth allows the production of macroscopic quantities of nanocrystallites with consistent structure, surface derivatization and a high degree of monodispersity. The samples produced are structurally characterized with a combination of X-ray and Electron Beam based techniques.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01425674
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