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  • 1
    Electronic Resource
    Electronic Resource
    Thermal-wave imaging of voids in structural ceramics (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 2801-2803 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Laser-excited thermal-wave magnitude and phase images were acquired by photoacoustic detection in the 20- to 1000-Hz modulation frequency range on surface and bulk laser absorbing ceramics having 20- to 50-μm-diam. voids and compared to optical photomicrographs made in reflection and transmission. Thermal-wave images were more straightforward to interpret for the voids in the ceramics which absorb light at the irradiated surface (surface thermal-wave generation) rather than in the bulk (bulk thermal-wave generation) because the bulk generated thermal-wave signal also involved the light reflection at the void interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341584
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  • 2
    Electronic Resource
    Electronic Resource
    Thermal-wave imaging of epoxy/aluminum interfaces (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 1730-1735 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Laser-excited thermal-wave image magnitude and phase were acquired by photoacoustic detection in the 10–1000-Hz modulation frequency range on epoxy/aluminum interface systems with surface (black) and bulk (white) laser-absorbing epoxy, different planar interface distances, surface and subsurface flaws, and different surface angle boundaries. The following conclusions were reached from the thermal-wave results: (1) thermally thin epoxy on aluminum layer thicknesses can be estimated from variable modulation frequency data; (2) planar and subsurface defect interface structures of epoxy/aluminum systems are best studied by examining both magnitude and phase images; (3) thermal-wave images are more straightforward to interpret for the systems that absorb light at the irradiated surface rather than in the bulk. These conclusions are consistent with thermal diffusion length and thermal-wave reflection effects predicted by theory for surface light-absorption conditions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341768
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  • 3
    Electronic Resource
    Electronic Resource
    Structure and electrical properties of Pb(ZrxTi1−x)O3 deposited on textured Pt thin films (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 1962-1967 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The texturing of the bottom electrode plays a key role in the structure and electrical properties of Pb(Zr, Ti)O3 (PZT) thin films. We fabricated Pt bottom electrodes having a different thickness on MgO single crystals at 600 °C by rf magnetron sputtering. As the thickness of platinum (Pt) thin film increased, the preferred orientation of Pt thin film changed from (200) to (111). PZT thin films were fabricated at 450 °C by electron cyclotron resonance-plasma enhanced metal organic chemical vapor deposition on the textured Pt thin films. The texturing of the bottom electrode caused drastic changes in the C–V characteristics, P–E characteristics, and fatigue characteristics of metal/ferroelectric material/metal (MFM) capacitors. The difference of the electrical properties between the PZT thin films having different texturing was discussed in terms-of the x–y alignment and the interface between electrode and PZT in MFM capacitors. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1385358
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  • 4
    Electronic Resource
    Electronic Resource
    Microwave response of YBa2Cu3O7−x grain boundary junction (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 2193-2195 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: YBa2Cu3O7−x superconductor thin films were deposited on LaAlO3(100) single crystal substrates using a metalorganic chemical vapor deposition method. These films showed a critical temperature of about 90 K and a critical current density of over 105 A/cm2 at 77 K. These films showed granular structure with 0.5–1.5 μm grains. Bridge-type junctions, 6 μm in width and 6 μm in length, were fabricated using photolithography and Ar ion milling techniques. Current-voltage (I-V) characteristics of these junctions with microwave irradiation at 77 K were studied. The critical current densities decreased as the irradiated microwave power increased. When microwaves are irradiated on the bridge at 77 K, the I-V characteristics showed constant voltage steps (Shapiro steps) at ΔV=nhν/2e, but subharmonic steps. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358799
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  • 5
    Electronic Resource
    Electronic Resource
    Electrical characteristics of (100), (111), and randomly aligned lead zirconate titanate thin films (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 7478-7482 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: (100), (111), and randomly aligned lead zirconate titanate thin films on Pt/Ti/Corning 7059 glass substrates were prepared using a sol-gel method. The thin films, having different alignments, were fabricated by different drying conditions for pyrolysis. The hysteresis loop and the capacitance-voltage characteristics were investigated using a standardized ferroelectric test system. The dielectric constant and the current-voltage characteristics of the films were investigated using an impedance analyzer and a pA meter, respectively. The microstructure was investigated using scanning electron microscopy. The (100) aligned film showed a relatively larger dielectric constant than the (111) and the randomly aligned films. The films aligned in particular directions showed higher hysteresis parameters than the randomly aligned film. The leakage current densities of the films aligned in particular directions were lower than that of the randomly aligned film. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358467
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  • 6
    Electronic Resource
    Electronic Resource
    Growth and field emission of carbon nanotubes on electroplated Ni catalyst coated on glass substrates (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 2591-2594 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Carbon nanotubes are grown on Ni catalyst coated on soda-lime glass substrates using chemical vapor deposition of C2H2 gas at 550 °C. Ni film is coated on the surface of Ag film using the electroplating method. Ni was etched by ammonia (NH3) gas in order to form nanometer sized catalytic particles before carbon nanotube growth. Pd film is applied as a gas activator to decrease the growth temperature of carbon nanotubes. The carbon nanotubes grown on Ni catalyst particles showed a multiwalled structure with defective graphite sheets at the wall. The turn-on voltage was about 2.8 V/μm with an emission current density of 10 μA/cm2, and the threshold voltage was about 4.0 V/μm with an emission current density of 10 mA/cm2. The Fowler-Nordheim plot showed a good linear fit, indicating that the emission current of carbon nanotubes follows Fowler-Nordheim behavior. The calculated field enhancement factor was 2850. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1389761
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  • 7
    Electronic Resource
    Electronic Resource
    Measurement of the linear electro-optic coefficients of sol-gel derived strontium barium niobate thin films using a two-beam polarization interferometer (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 2671-2673 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A two-beam polarization interferometer in a reflection configuration is used to measure the electro-optic coefficients of highly oriented strontium barium niobate thin films prepared by a sol-gel method. The technique enables the determination of the electro-optic coefficients of films using a strong Fabry–Perot effect with automatic adjustment and maintenance of the operation point of the interferometer. The linear electro-optic coefficients increase with increasing Sr content in the films. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126439
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  • 8
    Electronic Resource
    Electronic Resource
    Grain-size dependence of microcrack initiation in two-phase brittle systems (1988)
    Springer
    Journal of materials science 7 (1988), S. 260-262 
    Details
    ISSN: 1573-4811
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01730190
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  • 9
    Electronic Resource
    Electronic Resource
    Synthesis and Characterization of Highly Oriented Sol-Gel (Pb, La) TiO3 Thin Film Optical Waveguides (1998)
    Springer
    Journal of sol gel science and technology 13 (1998), S. 869-870 
    Details
    ISSN: 1573-4846
    Keywords: sol-gel ; lead lanthanum titanate ; thin film ; optical waveguide ; optical propagation loss
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Abstract The preparation and the optical characteristics of highly oriented PLT thin films are investigated. PLT films fabricated on MgO(100) and c-plane sapphire substrates have highly grown in (100) and (111) orientations, respectively. PLT films with high La content have a near cubic structure and weak anisotropy of refractive indices. The optical propagation losses of PLT films decrease as the La content of the films increases due to a complex interaction of surface roughness reduction and a reduction in the anisotropy refractive index. However, optical scattering in thicker sol-gel PLT thin film waveguides occurs by the internal scattering mechanism from the defects and the interfaces rather than by the surface scattering mechanism.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1008610920804
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  • 10
    Electronic Resource
    Electronic Resource
    Impedance analyses of cooling-rate effects on the depletion layer of PTCR materials (1993)
    Springer
    Journal of materials science 28 (1993), S. 5765-5769 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Cooling-rate effects on the depletion layer of BaTiO3 positive temperature coefficient of resistance (PTCR) were analysed using d.c. resistivity and a.c. complex impedance spectroscopy. As the cooling rates decreased, the d.c. resistivity of the sample increased. A.c. complex impedance spectra showed that the observed d.c. resistivity increase was mainly due to the grain-boundary resistivity increase. The grain resistivity also exhibited relatively weak PTCR behaviour. The built-in potential and the depletion-layer width were analysed using the a.c. complex impedance data. Slow cooling rate produced higher built-in potential and large depletion-layer width. The relationship between the built-in potential and the depletion-layer width at different temperatures was analysed and used to explain the observed grain-boundary resistivity change. The resistivity decrease in the low-temperature region was due to the depletion-layer width decrease. The resistivity jump over the temperature was due to both the built-in potential and the depletion-layer width changes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00365179
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