Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
68 (1996), S. 2678-2680
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Lattice defects in GaN epilayers grown on 6H–SiC(0001) by metalorganic vapor phase epitaxy (MOVPE) have been characterized by transmission electron microscopy (TEM). The predominant defects in the film were threading dislocations and half-loops with Burgers vectors 1/3〈112¯0〉, [0001], and 1/3〈112¯3〉. Planar faults were also observed in the film that are thought to be inversion domain boundaries (IDBs). © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.116279
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