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  • 1
    Electronic Resource
    Electronic Resource
    Influence of the orientation of the silicon substrate on the properties of avalanche Si:Er:O light-emitting structures (1999)
    Springer
    Semiconductors 33 (1999), S. 613-615 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The influence of the orientation of silicon on the structural and luminescence properties of avalanche light-emitting diodes fabricated by the coimplantation of erbium and oxygen followed by solid-phase epitaxial (SPE) crystallization of the amorphized layer is considered. The luminescence properties are a consequence of the formation of various structural defects during the SPE crystallization: V-shaped dislocations and erbium precipitates form in (100) Si:Er:O layers, and larger structural defects, i.e, twins, are observed in (111) Si:Er:O layers along with an increase in the dislocation density by more than four orders of magnitude in comparison with the (100) orientation. The luminescence properties of avalanche and tunnel light-emitting diodes are also compared. In contrast to tunnel diodes, in avalanche diodes erbium ions are excited in the entire space-charge layer, and the effective excitation cross section of the Er3+ ions and their lifetime in the excited state are 3–4 times larger.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187739
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  • 2
    Electronic Resource
    Electronic Resource
    Effect of ion implantation on redistribution of erbium during solid-phase epitaxial crystallization of silicon (1999)
    Springer
    Semiconductors 33 (1999), S. 101-105 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract It is known that Er-ion implantation and O-ion coimplantation into an amorphized Si layer affect the final Er concentration profile when the layer is subjected to solid-phase epitaxial (SPE) crystallization. This paper discusses how this effect depends on dose, energy, temperature, and the parameters of the segregation model, i. e., the transition layer width L and the coordinate dependence of the segregation coefficient k(x). Increasing the Er implantation dose as well as decreasing the implantation energy and temperature cause L to decrease and the segregation coefficient k to increase more rapidly at the initial stage of SPE crystallization. These phenomena could be due to increased defect formation in the amorphous implanted layer. Additional O coimplantation leads to similar changes in L and k(x), due to Er-O complex formation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187656
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  • 3
    Electronic Resource
    Electronic Resource
    Holmium redistribution upon solid-phase epitaxial crystallization of amorphized silicon layers (2000)
    Springer
    Semiconductors 34 (2000), S. 1-5 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract Concentration profiles of Ho were investigated after annealing at a temperature of 620°C of silicon layers implanted with 1-MeV Ho+ ions to doses of 1−3×1014 cm−2 exceeding the amorphization threshold, as well as with O+ ions with energies that ensure the coincidence of the concentration maxima of implanted impurities and doses that are greater by an order of magnitude than those of Ho+. The crystallization of the amorphized silicon layer occurs by the mechanism of solid-phase epitaxy. The main features of the segregation redistribution of Ho are shown to be similar to the previously studied segregation behavior of Er. An increase in the Ho concentration at the initial stage of the solid-phase epitaxial crystallization is explained by the small rate of mass transfer through the amorphous layer-single crystal interface. An analytical expression was obtained to describe the variation of the segregation coefficient in the process of solid-phase epitaxial crystallization, including its initial stage, which allows the calculation concentration profiles of rare-earth elements.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187941
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  • 4
    Electronic Resource
    Electronic Resource
    Redistribution of erbium during the crystallization of buried amorphous silicon layers (1999)
    Springer
    Semiconductors 33 (1999), S. 606-609 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The redistribution of Er during its implantation in silicon at doses close to the amorphization threshold and its subsequent solid-phase epitaxial (SPE) crystallization is investigated. The formation of a buried amorphous (a) layer is discovered at Er doses equal to 5×1013 and 1×1014 cm−2 using Rutherford backscattering. The segregation of Er in this case takes place inwardly from the two directions corresponding to the upper and lower boundaries of the buried αlayer and leads to the formation of a concentration peak at the meeting place of the two crystallization fronts. A method for calculating the coordinate dependence of the segregation coefficient k from the distribution profiles of the erbium impurity before and after annealing is proposed. The k(x) curve exhibits a drop, whose width increases with decreasing Er implantation dose. Its appearance is attributed to the nonequilibrium nature of the segregation process at the beginning of SPE crystallization.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187738
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  • 5
    Electronic Resource
    Electronic Resource
    The influence of electrically inactive impurities on the formation of donor centers in silicon layers implanted with erbium (2000)
    Springer
    Semiconductors 34 (2000), S. 510-513 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The influence of the additional implantation of electrically inactive impurities of carbon, oxygen, nitrogen, and fluorine on the formation of donor centers in silicon implanted with erbium was studied. It is shown that additional implantation brings about an increase in the concentration of donor centers formed during anneals. Variation in the concentration of donor centers depends on the type of introduced impurity. The results indicate that electrically inactive impurities are involved in the formation of donor centers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1188016
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  • 6
    Electronic Resource
    Electronic Resource
    Photosensitivity of a-Si:H/n-InSe heterocontacts (2000)
    Springer
    Semiconductors 34 (2000), S. 677-679 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract Rectifying photosensitive structures were obtained for the first time by bringing the surfaces of thin films of amorphous hydrogenated silicon deposited onto the silica-glass substrates into direct optical contact with the InSe natural-cleavage surface. Spectral dependences of the quantum efficiency of the obtained heterocontacts were studied, and the prospects for the use of the new a-Si:H/n-InSe heterocontacts in solar cells were assessed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1188054
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  • 7
    Electronic Resource
    Electronic Resource
    Polarization photosensitivity of a-Si:H/c-Si heterojunctions (2000)
    Springer
    Semiconductors 34 (2000), S. 790-793 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The photosensitivity of heterojunctions formed by depositing thin amorphous films on silicon crystalline substrates is investigated. It is found that heterojunctions exhibit polarization photosensitivity, which is observed at an oblique incidence of the linearly polarized radiation on their receiving plane. The induced photopleochroism of heterojunctions increases quadratically with an increase in the angle of incidence θ and reaches 60% for θ=80°. It is concluded that the heterojunctions obtained can be used as the broadband photodetectors of the linearly polarized radiation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1188074
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  • 8
    Electronic Resource
    Electronic Resource
    Avalanche light-emitting diodes operating at room temperature based on single-crystal Si:Ho:O (1999)
    Springer
    Semiconductors 33 (1999), S. 850-851 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract Electroluminescence of Ho3+ ions has been observed for the first time in diode structures based on single-crystal silicon doped with holmium and oxygen. The product of the effective cross-section for excitation of Ho3+ ions and the lifetime of the first excited state was determined under avalanche breakdown conditions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187796
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  • 9
    Electronic Resource
    Electronic Resource
    Low-temperature photoluminescence in holmium-doped silicon (1999)
    Springer
    Semiconductors 33 (1999), S. 407-409 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract In this paper the photoluminescence (PL) of holmium-doped silicon is discussed. The silicon was first implanted with holmium ions at energies of 1–2 MeV and doses of 1×1013–3×1014 cm−2, and then annealed at temperatures of 620–900 °C for 0.5–1 h. In order to increase the concentration of electrically and optically active centers, the silicon was implanted a second time with oxygen ions at energies of 0.14–0.29 MeV and doses of 1×1014–3×1015 cm−2. Several photoluminescence lines, which are attributable to the transitions of electrons from the first excited state of the Ho3+ ion (5 I 7) to the ground state (5 I 8), were observed. The amplitudes of the most intense lines, which correspond to transitions at frequencies 5119 and 5103 cm−1, decreased by more than an order of magnitude in the temperature range 4.2−78 K. The PL intensity of the holmium ions increased with increasing concentrations of the implanted rare-earth ions and oxygen.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187703
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  • 10
    Electronic Resource
    Electronic Resource
    Photoelectric phenomena in a-Si:H/p-CuInSe2 heterostructures (2000)
    Springer
    Semiconductors 34 (2000), S. 658-661 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The photosensitive a-Si:H/p-CuInSe2 heterostructures were obtained for the first time by the deposition of hydrogenated amorphous silicon on polycrystalline p-CuInSe2 substrates. The photoelectric properties of the new system were studied. The conclusion was drawn on the prospects of the application of this system for solar and linearly polarized radiation photoconvertors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1188049
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