Springer Online Journal Archives 1860-2000
Electrical Engineering, Measurement and Control Technology
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Abstract A field effect transistor device (FET), consisting of a nonlinear Mott Insulator channel material, and a high dielectric-constant gate oxide, is explored as a nanoscale device. Experimental functionality of a large scale prototype (5 μm channel length) has been demonstrated. The underlying physics of the device is analyzed and modeled using a time-dependent Hartree approach. Timing estimates suggest a relatively short switching time.
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