ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Diffusion in semiconductor junctions (hetero, homo, and graded) is influenced by the fields present in the junction. The potential, present in the junction is determined by the Poisson equation, in which the charge density depends on the internal potential. This potential is determined by Fermi-Dirac statistics applied to the valence band, the conduction band, and the impurity levels in, and near, the junction. We utilize the complete set of equations, rather than the standard simplified model based on the use of impurity levels only. Solution of the problem is accomplished in two ways: first, a number of possible approximations are evaluated and discussed; second, the equations are solved numerically and the results are compared with the previously made approximations. Special attention is paid to the case of a graded junction.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.339947
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