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  • 1
    Electronic Resource
    Electronic Resource
    Simple laboratory instrumentation for measuring pointwise dimensions from chaotic time series (1994)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 65 (1994), S. 3032-3033 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: An analog instrumentation for estimating dimensions of chaotic dynamical systems has been developed. The technique employs time series of the Poincaré points successively displayed on the screen of an oscilloscope. It provides a rapid way to estimate the pointwise dimension from a single variable directly in an experiment. The instrumentation is easy to build and is convenient to employ. We have tested it by applying to periodic and quasiperiodic oscillators, and have verified by means of the fractal two-dimensional Poincaré map, simulated from the Duffing–Holmes differential equation. The measured values well agree with the computer calculated ones.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1144599
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  • 2
    Electronic Resource
    Electronic Resource
    Decrease of channel conductivity with increasing sheet electron concentration in modulation-doped heterostructures (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 1056-1060 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The great decrease of electron mobility with increasing sheet electron concentration nS〉5×1015 m−2 in modulation-doped Al0.25Ga0.75As/GaAs/Al0.25Ga0.75As and Al0.25Ga0.75As/In0.19Ga0.81As/GaAs quantum wells is observed experimentally. At nS〉1016 m−2 a conductivity decreases with increasing the sheet electron concentration. The calculations of electron mobility limited by polar optical (PO) phonon scattering show that the great increase of electron intrasubband scattering by emission of PO phonons when nS exceeds 1015 m−2 is responsible for the mobility and conductivity decrease. When nS changes in the range of 1015−1017 m−2, the alternate increase and decrease of channel conductivity is observed. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373776
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  • 3
    Electronic Resource
    Electronic Resource
    Photoluminescence and electron subband population in modulation doped AlGaAs/GaAs/AlGaAs heterostructures (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 5564-5567 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The anomalies in photoluminescence spectra of modulation doped AlGaAs/GaAs/AlGaAs double barrier heterostructures with various GaAs quantum well (QW) widths are observed. The intensity of the photoluminescence peak excited by Ar laser and associated with electron optical transitions from the second QW subband to the valence band becomes higher than for the case of the first (lowest) subband in the GaAs QW width range L=22.5–30 nm. The calculations of electron-polar optical phonon scattering rate show that the well-width dependence of the intersubband electron scattering rate due to emission of confined and interface optical phonons is responsible for the photoexcited electron subband population redistribution and anomalies in the photoluminescence spectra. The transition rate for the second QW subband electron binding to the exciton state is evaluated as 25×1010 s−1 at L〈22.5 nm and 4×1010 s −1 at 22.5〈L≤30 nm. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366416
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  • 4
    Electronic Resource
    Electronic Resource
    Electron mobility and subband population tuning by a phonon wall inserted in a semiconductor quantum well (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 1775-1780 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electron-optical phonon scattering rate and electron subband population in a semiconductor quantum well (QW) containing a phonon wall (Ph-wall) is calculated. It is shown that the Ph-wall (a barrier of one–two AlAs monolayers) inserted into an AlAs/GaAs/AlAs QW changes radically the intra- and intersubband scattering rates. Electron subband energy spectra, phonon frequencies, electron and phonon wave functions and scattering rates are found to depend on the Ph-wall position in the QW. The largest decrease of the intrasubband electron-phonon scattering rate takes place when the Ph-wall is located at the QW center. The intersubband scattering rate increases resonantly when the intersubband energy separation is equal to the interface phonon energy. The Ph-wall increases the electron mobility in the QW except the areas where the resonance scattering takes place. The Ph-wall position in the QW causing the subband population inversion is determined in the case of optical excitation. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364033
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