Polymer and Materials Science
Wiley InterScience Backfile Collection 1832-2000
Reactive ion sputtering (N2+) is shown to improve depth resolution significantly in conventional Auger electron spectroscopy depth profiling of multilayered metallic thin film samples as compared to standard argon ion bombardment. Layer modulations on the order of the escape depth of the Auger electrons are shown to be discernible by conventional Auger depth profiling in a texturing-prone situation (microscopically modulated thin film samples) when N2+ is used as the sputtering species. Oxygen ion sputtering was observed to give greater improvement in depth resolution than nitrogen, but was also observed to have a deleterious influence on instrument performance. Increasing the N2+ ion energy from 2 to 5 Ke V was found to degrade depth resolution slightly.
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