Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
64 (1994), S. 1123-1125
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The spatial variation of the growth rate on mesa-etched GaAs (1¯1¯1¯)B substrates during molecular beam epitaxy of GaAs is measured from the period of the reflection high-energy electron diffraction (RHEED) intensity oscillation using in situ scanning microprobe RHEED. The surface diffusion length of Ga adatoms on the (1¯1¯1¯)B surface is determined from the spatial variation of the growth rate. The surface diffusion length on the (1¯1¯1¯)B surface increases as the substrate temperature is raised or the arsenic pressure is decreased. The typical value of the diffusion length is about 10 μm at a substrate temperature of 580 °C and an arsenic pressure of 5.7×10−4 Pa, which is an order of magnitude larger than that on the (100) surface along the [011] direction. The activation energy of the surface diffusion length changes with the surface reconstruction. Anisotropic diffusion, as reported for the (100) surface, is not observed on the (1¯1¯1¯)B surface.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.110826
Permalink
|
Location |
Call Number |
Expected |
Availability |