ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    High parental age is associated with sporadic hereditary retinoblastoma: the Dutch retinoblastoma register 1862–1994 (1996)
    Springer
    Human genetics 〈Berlin〉 98 (1996), S. 109-112 
    Details
    ISSN: 1432-1203
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Medicine
    Notes: Abstract We wished to determine the influence of parental age at the birth of a retinoblastoma patient on the risk of sporadic hereditary retinoblastoma. The parental age at birth of 941 patients of the Dutch retinoblastoma register (1862–1994) was identified and compared between sporadic hereditary and nonhereditary patients. In a subcohort (1936–1994), a comparison was made with parental age at birth in the general population, as obtained from the Central Bureau of Statistics. Missing birth dates of the parents of retinoblastoma patients were traced with the help of the municipal registries and the Central Bureau of Genealogy. The mean paternal age was 10.7 months higher and the mean maternal age was 11.0 months higher in the sporadic hereditary retinoblastoma patients than in parents of nonhereditary patients. In the subcohort, the mean paternal and maternal ages of sporadic hereditary patients were also higher (12.4 and 11.5 months, respectively) than those of the general population. All differences were statistically significant. This study shows that a high parental age is associated with an enhanced risk of sporadic hereditary retinoblastoma.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s004390050168
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    A Prototype Continuous Flow Polymerase Chain Reaction LTCC Device (2007)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 539-543 (Mar. 2007), p. 523-528 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: There is a growing need for remote biological sensing in both laboratory andharsh field environments. Sensing and detection of biological entities such as anthrax,Ebola and other micro-organisms of interest involves sampling of the environment,amplification, analysis and identification of the target DNA. A key component of sucha sensor is a low cost, portable, reusable, continuous flow polymerase chain reaction(PCR) thermal cycler. Fabrication with low temperature co-fired ceramics (LTCC)can provide a reusable low cost device capable of operating in a wide range ofenvironmentsThe design and manufacture of a prototype continuous flow micro-fluidic PCRdevice using low temperature co-fired ceramic is presented. Initial modeling of flowcharacteristics and heat transfer was carried out in SolidWorks™. The prototypedevice employs resistance heaters below the channels, buried and surfacethermocouples for temperature monitoring, and air gaps for thermal isolation
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/14/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.539-543.523.pdf
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Direct measurement of CAs in group III+C coimplanted GaAs (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 3829-3834 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of In and Ga coimplanted with C into GaAs on the concentration of CAs has been investigated by local vibrational mode spectroscopy, Rutherford backscattering, particle-induced x-ray emission, and Hall effect. The dose of the C was fixed at 5×1014 cm−2, 27 keV, while the doses of either In, 185 keV, or Ga, 160 keV, ranged from 5×1013 to 5×1015 cm−2. Based on the Hall-effect and local vibrational mode data, 99% of the C, when implanted alone and annealed, is not located as isolated, substitutional atoms on either sublattice, but in an inactive complex. The coimplanted group-III species acts to increase both the concentration of CAs ([CAs]) and the sheet hole concentration. For coimplant doses of 5×1013 and 5×1014 cm−2, these values are in good agreement. Increasing the dose of the group-III coimplanted ion to 5×1015 cm−2 results in a hole concentration that is 45% less than the [CAs] and the coimplanted ions begin to occupy nonsubstitutional sites. The reduction in the concentration of holes due to CAs at the highest dose of coimplanted ion appears to be caused by a compensating defect which limits the maximum sheet hole concentration obtainable by the coimplantation technique in GaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356061
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    The effect of coimplantation on the electrical activity of implanted carbon in GaAs (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 7118-7123 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of radiation damage and stoichiometry on the electrical activity of carbon implanted in GaAs are studied. Damage due to implantation of an ion heavier than C increases the number of C atoms which substitute for As (CAs). Creation of an amorphous layer by implantation and the subsequent solid phase epitaxy during annealing further enhances the concentration of CAs. However, the free carrier concentration does not increase linearly with increasing concentration of CAs due to compensating defects. Activation of implanted C is maximized by maintaining the stoichiometry of the substrate which reduces the number of compensating defects in the crystal. Under optimum conditions for carbon implanted at a dose of 5×1014 cm−2, the carbon acceptor activity can be increased from 2% to 65% of the total implanted carbon.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355027
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Amphoteric behavior and precipitation of Ge dopants in InP (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 4907-4915 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have directly correlated the electrical behavior, the impurity lattice site location, ion damage, and the local bonding environments of Ge-dopant ions implanted into InP. We have found that after rapid thermal annealing the free electron concentration in the samples implanted at room temperature (RT) are always higher than those implanted at liquid nitrogen temperature (LNT). Although the macroscopic structure seems to be insensitive to the implantation temperature, significantly more local disorder is created in the LNT implanted amorphous layers. Moreover, the amphoteric bonding structure of the Ge atoms is found to be well established already in the as-implanted amorphous InP. After high temperature annealing ((approximately-greater-than)800 °C), the Ge atoms rearrange locally with more of the Ge substituting the In site than the P site resulting in n-type conductivity. The solid solubility of Ge in the InP is measured to be ∼1.4–1.6×1020/cm3 while the free electron concentration is estimated to saturate at ∼3.4×1019/cm3. The relatively low electron concentration can be explained by Ge precipitation and the compensation of GeIn donors by GeP acceptors in the RT implanted case. The further reduction in electron concentration in the LNT implanted samples is believed to be related to the high residual damage found in these samples. The high solubility of Ge in InP can be attributed to the availability of two possible sublattice sites for the dopant and the compensation of the local strains due to the amphoteric substitution of the Ge. The concentration ratio of the GeIn to GeP determined in the heavily implanted material has been used to estimate the difference in the formation energy of Ge substituting those two different sites.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363533
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Direct evidence of carbon precipitates in GaAs and InP (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1145-1147 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Raman spectra of carbon-doped GaAs and InP show two peaks which are characteristic of C clusters with sp2 bonding. The peaks are seen in C-implanted GaAs and InP following either rapid thermal annealing or furnace annealing. The peaks are also seen in heavily doped epilayers following furnace annealing. Various mechanisms for C precipitation are discussed. Experimental evidence suggests that the loss of the group V component at the surface during annealing may play a role in the precipitation of C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112123
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Amphoteric substitutionality and lattice distortion of Ge in InP (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 1543-1545 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the electrical and structural properties of InP implanted with Ge ions (2×1015/cm2). The implantation was performed at both room temperature (RT) and liquid nitrogen temperature (LNT). After annealing at 850 °C for 5 s, both sets of samples exhibited n-type conductivity. The n-type activation efficiency in the RT implanted sample was about a factor of 2 higher than that in the LNT sample (15% and 8%, respectively). Extended x-ray absorption fine structure spectroscopy (EXAFS) shows direct evidence of the amphoteric substitutionality of the Ge atoms in InP for both samples. The ratios of Ge on In sites to Ge on P sites, derived from the EXAFS results, are consistent with the electrical behavior of the samples. The EXAFS results also reveal that the Ge—In and Ge—P bond lengths in the RT sample are very similar to their theoretical values, but are very different from the original In—P bond length. A relaxation in the Ge—In bond is observed in the LNT sample, resulting in a Ge—In bond length very similar to the original In—P bond length.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111886
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Substitutionality of Ge atoms in ion implanted AlSb (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2406-2408 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The substitution of Ge atoms into ion implanted AlSb is investigated by extended x-ray absorption fine structure spectroscopy. Our results reveal that in the as-implanted material, the implanted Ge atoms are equally distributed between two specific sites, one surrounded by Al atoms and the other surrounded by Sb atoms. After annealing at 750 °C for 5 s, the coordination number of the Ge atoms increases from ∼3 to ∼4 indicating solid phase regrowth of the implantation induced amorphous surface layer. Moreover, in the annealed AlSb, the substitution of Ge atoms into the Al sublattice dominates with an estimated GeAl]:[GeSb]∼0.8:0.2. These results suggest that Ge atoms act preferentially as donor species in AlSb. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113955
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Coimplantation and electrical activity of C in GaAs: Stoichiometry and damage effects (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 2383-2385 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have coimplanted carbon and a series of elements (B, N, Al, P, Ar, Ga, As, and Kr) in GaAs to study the effect of both implant damage and stoichiometry on activation. Electrical activity of C was found to increase due to the additional damage caused by coimplantation of a heavy element regardless of the chemical nature of the coimplant. Maintaining stoichiometry by coimplanting a group III element further increased activation in substrates heavily damaged during implantation. Activation of 65±3%, corresponding to a sheet free-carrier concentration of 3.5×1014 cm−2, was achieved by coimplanting Ga and annealing at 950 °C for 10 s.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107004
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Air Pollution by Formation of Sulfuric Acid in Fogs (1960)
    s.l. : American Chemical Society
    Industrial & engineering chemistry 52 (1960), S. 861-863 
    Details
    ISSN: 1520-5045
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ie50610a031
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...