ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
An unusual contrast in SEM secondary electron imaging for PVT grown silicon carbide with vanadium doped was observed. An explanation in point of the compensation of different type of dopant was drawn. And the relationship between the doping properties of vanadium and orientation of SiC domains was investigated
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/20/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.600-603.43.pdf
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