ISSN:
1063-7826
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Physics
Notes:
Abstract Microstructures in p-CuInSe2 single crystals tailored by the strong electric field have been studied using the method of local (d⩽1 µm) cathodoluminescence (CL). The shortest-wavelength radiation (ℏω=1.023 eV) has been observed from the n-type layer and longer-wavelength radiation (ℏω=1.006 eV)—from the p-type regions. An analysis of the cathodoluminescence spectra has allowed us to attribute the experimental features to optical transitions associated with donor and acceptor levels of V Cu, V Se, and Cui point defects in the crystal. Test measurements of EBIC, the C–V characteristics, and the DLT spectra confirm the cathodoluminescence data and reveal additional features of the p-n-p microstructures.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1134/1.1187056
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