Publication Date:
2012-11-21
Description:
Hopping transport and the Hall effect near the insulator–metal transition in electrochemically gated poly(3-hexylthiophene) transistors Nature Communications 3, 1210 (2012). doi:10.1038/ncomms2213 Authors: Shun Wang, Mingjing Ha, Michael Manno, C Daniel Frisbie & C Leighton
Electronic ISSN:
2041-1723
Topics:
Biology
,
Chemistry and Pharmacology
,
Natural Sciences in General
,
Physics
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