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  • 1
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    Raw data files recorded by CTD buoy 2020O10 in the Arctic Transpolar Drift in 2020/21 as part of the MOSAiC Leg 5 (PS122/5) buoy deployments (2023)
    PANGAEA
    Details
    Publication Date: 2024-04-20
    Description: An ice-tethered buoy system (2020O10) carrying 5 CTDs was deployed by RV Polarstern in the central Arctic Ocean in August 2020 as part of MOSAiC Leg 5 (PS122/5). The buoy was equipped with 5 Seabird SBE37IMP Microcat CTDs mounted along an 100m long inductive modem tether at depths of 10, 20, 50, 75 and 100m. The buoy was installed close to the main buoy site in the central observatory of Leg 5, and co-located with multiple Snow Buoys, Ice Mass Balance Buoys and other, more complex instruments. The individual instruments were programmed to record oceanographic data internally at 2-minute intervals. The surface unit of the buoy prompted the instruments for an additional measurement every 10 minutes, which was then transmitted to a base station via iridium along with GPS position and time, as well as surface temperature. After a several months long drift through the central Arctic Ocean and Nordic Seas, the buoy was recovered in Húnaflói, Iceland in October 2022. As a result, the internally recorded 2-minute data from the CTDs could also be secured. The attached zip archive comprises the unprocessed 10-minute data transmitted by the buoy, the 2-minute data downloaded and converted from the 5 individual CTDs after their recovery, as well as selected auxiliary information. A processed and quality controlled version of this dataset will be provided and linked to upon completion.
    Keywords: 2020O10; Arctic Ocean; buoy; BUOY_CTD_CHAIN; Buoy; CTD chain; CTD; FRAM; FRontiers in Arctic marine Monitoring; Iceland; MIDO; MOSAiC; MOSAIC_PO; MOSAiC20192020; Multidisciplinary drifting Observatory for the Study of Arctic Climate; Multidisciplinary Ice-based Distributed Observatory; oceanography; Polarstern; PS122/5; PS122/5_58-94; Transpolar Drift
    Type: Dataset
    Format: application/zip, 86.3 MBytes
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  • 2
    Electronic Resource
    Electronic Resource
    Precision X-Ray Techniques for Semiconductors (1988)
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Materials Research 18 (1988), S. 283-302 
    Details
    ISSN: 0084-6600
    Source: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1146/annurev.ms.18.080188.001435
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Characterization of InP/GaAs/Si structures grown by atmospheric pressure metalorganic chemical vapor deposition (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 1083-1088 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thickness dependence of material quality of InP-GaAs-Si structures grown by atmospheric pressure metalorganic chemical vapor deposition was investigated. The InP thickness was varied from 1–4 μm, and that of the GaAs from 0.1–4 μm. For a given thickness of InP, its ion channeling yield and x-ray peak width were essentially independent of the GaAs layer thickness. The InP x-ray peak widths were typically 400–440 arcsec for 4-μm-thick layers grown on GaAs. The GaAs x-ray widths in turn varied from 320–1000 arcsec for layer thicknesses from 0.1–4 μm. Cross-sectional transmission electron microscopy showed high defect densities at both the InP-GaAs and GaAs-Si interfaces. In 4-μm-thick InP layers the average threading dislocation density was in the range (3–8)×108 cm−2 with a stacking fault density within the range (0.4–2)×108 cm2. The He+ ion channeling yield near the InP surface was similar to that of bulk InP (χmin∼4%), but rose rapidly toward the InP-GaAs heterointerface where it was typically around 50% for 1-μm-thick InP layers. All samples showed room-temperature luminescence, while at 4.4 K, exciton-related transitions, whose intensity was a function of the InP thickness, were observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343043
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  • 4
    Electronic Resource
    Electronic Resource
    Erratum: "X-ray and Raman characterization of AlSb/GaSb strained layer superlattices and quasiperiodic Fibonacci lattices'' [J. Appl. Phys. 64, 6733 (1988)] (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 3963-3963 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344504
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  • 5
    Electronic Resource
    Electronic Resource
    Semi-insulating properties of Fe-doped InP grown by hydride vapor phase epitaxy (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 5880-5884 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial layers grown by hydride vapor phase epitaxy using N2 as a carrier gas were studied. Charge transport measurements at temperatures as high as 416 K and as low as 38 K were made on layers grown on (100)-, (311)B-, (511)B-, and (110)- oriented substrates. Resistivities in the range 4×106–2×1010 Ω cm were obtained in all cases except for growth on (311)B surfaces. In that case resistivities were in the range 1×103–5×107 Ω cm. Detailed fitting to I-V data was done using a two trap model, and a good fit was obtained if traps lying at 0.68 and 0.30 eV below the conduction band were included. The deeper lying trap concentration which gave the best fit was in the range 1–8×1015 cm−3. This level corresponds to the Fe3+(arrow-right-and-left)Fe2+ transition which is usually observed in semi-insulating bulk and MOCVD grown Fe-doped InP and which compensates the background donors. A concentration lying in the range 2–20×1018 cm−3 must be used for the 0.30-eV trap to produce a good fit. The presence of this trap at such a large concentration also explains our observations that the Fermi level moves up in the band gap as the temperature is decreased. We speculate that this trap is N impurity related. Secondary-ion-mass spectrometry results rule out the possibility that the 0.30-eV trap is Fe related. Low-temperature photoluminescence spectra typical of Fe-doped InP were obtained and revealed a broad band at 1.1 eV. Such a band has been commonly reported for bulk InP:Fe and is usually assigned to an Fe related deep level. Our results suggest that this assignment may not be correct for our material.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343611
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  • 6
    Electronic Resource
    Electronic Resource
    High resolution inelastic x-ray scattering spectrometer at the advanced photon source (1998)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 69 (1998), S. 3109-3112 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We have commissioned a new instrument for high resolution inelastic x-ray scattering on the inelastic scattering beamline of the Synchrotron Radiation Instrumentation Collaborative Access Team on sector 3 of the Advanced Photon Source. So far, the instrument is set up at 13.84 keV with a total energy resolution of 7.5 meV and a momentum resolution of ≤0.1 Å−1. We present technical details of the instrument, which includes an in-line monochromator, a focusing mirror, and a focusing analyzer. The performance of the instrument was demonstrated in studies of phonons in diamond and chromium. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1149068
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  • 7
    Electronic Resource
    Electronic Resource
    Recent experiments with liquid gallium cooling of crystal diffraction opticsa) (1992)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 1746-1754 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The x-ray beams for the next generation of synchrotrons will contain much more power (1–10 kW) than is available at present day facilities. Cooling the first optical components in these beam lines will require the best cooling technology that one can bring to bear. Argonne continues to pioneer the use of liquid metals as the cooling fluid and has adopted liquid gallium as the liquid metal of choice. Its low melting point, 29.7 °C and its very low vapor pressure make it an easy fluid to handle and its high thermal conductivity and heat capacity make it an excellent cooling fluid. A series of experiments were performed during April 1991 with the wiggler beam at the F2 station of the CHESS facility at Cornell to investigate the cooling of large areas of high power. Two types of cooling crystal geometries were tested. One where the cooling channels were core drilled just below the surface of the crystal and a second where slots were cut into the crystal just below the surface with a diamond saw. Both crystals performed well with photon beam powers up to 1050 W and power densities of up to 14.5 W/mm2 at normal incidence. An infrared camera was used to measure the variation in the temperature of the top layer of the silicon crystals. For the core-drilled crystal the peak temperature measured at the center of the beam at a power density of 12.3 W/mm2 was 15 °C hotter than the crystal surface outside of the beam with a flow of liquid gallium of 2 gpm (gallons per minute) and was 10 °C with a flow of 4 gpm. The maximum distortion of the crystal surface distortion of the core-drilled crystal was about ±2.0 arcsec for the 2 gpm case with a maximum power density of 10.9 W/mm2 and about 5% of the expected beam intensity was lost at peak power of 14.5 W/mm2. For the slotted crystal the peak temperature difference for a peak power of 10.9 W/mm2 was 3.5 °C and 2.0 °C for liquid gallium flows of 1 gpm and 2 gpm, respectively. No intensity loss was measured for the maximum power density of 14.5 W/mm2. The fact that the peak temperature difference on the surface of both crystals was decreasing with increased flow of liquid gallium suggests that even higher power densities can be accommodated with higher flows of liquid gallium.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1143334
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  • 8
    Electronic Resource
    Electronic Resource
    Possible use of direct silicon-on-silicon bonding for construction of analyzers for inelastic scattering : The 9th National conference on synchrotron radiation instrumentation (1996)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 3366-3366 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Bonding of silicon directly to silicon is possible with proper preparation of the two surfaces to be bonded. The advantage of such a method is that a bonding agent is not required, and direct bonding avoids figure errors introduced by thickness variations in a bonding agent. We have succeeded in bonding a 3-inch-diameter diced (1 mm × 1 mm) silicon(111) oriented wafer to a silicon concave spherical form having a 3-m radius. A very good rms figure error of 0.059 millirad over the entire area of the analyzer was measured. The suitability for x-ray inelastic scattering due to introduced strain is, however, still an open question. Whether or not deleterious strain is unavoidably introduced during the bonding process is a question we will answer with availability of photons on sector 3 of the SRI CAT at the Advanced Photon Source. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1146928
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  • 9
    Electronic Resource
    Electronic Resource
    Alternative Methods for Sub-eV Resolution Inelastic X-ray Scattering : The 9th National conference on synchrotron radiation instrumentation (1996)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 3380-3380 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A synopsis of SRI workshop 9 held on October 20, 1995, is given. Details concerning the oral presentations of speakers not contributing to these proceedings are included. The workshop consisted of the following invited presentations: 1. M. Schwoerer-Boehning (APS), "Experimental Needs for Milli-eV Resolution Inelastic X-ray Scattering, '' 2. E. E. Alp (APS), "Inelastic Nuclear Resonant X-ray Scattering,'' 3. A. Baron (ESRF), " Inelastic X-ray Scattering via Nuclear Resonant Analyzer,'' 4. D. E. Moncton (APS), " An Exact Backscattering Beamline,'' 5. A. Caticha (SUNY-Albany), "X-ray Fabry-Perot Cavities,'' 6. E. D. Isaacs (AT&T Bell Labs), "Flux and Resolution Requirements for Studies of Electronic Excitations in Solids,'' 7. C. K. Stahle (NASA), "Hard X-ray Detectors with Very High Energy Resolution,'' 8. A. K. Freund (ESRF), "Mosaic Crystal Analyzers.'' These proceedings contain separate papers by Caticha, Isaacs, and Stahle for the above listed presentations, and we will not discuss them further here. The other presentations are summarized below. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1146932
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  • 10
    Electronic Resource
    Electronic Resource
    Prototype grooved and spherically bent Si backscattering crystal analyzer for meV resolution inelastic x-ray scattering : Proceedings of the 5th international conference on synchrotron radiation instrumentation (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 2075-2077 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The high-order backscattering reflections from single crystals of silicon have mrad rocking curve widths that can be exploited to produce meV energy-resolution focusing analyzer crystals for use in inelastic x-ray scattering experiments at third-generation synchrotron sources. The first generation of these analyzers has been limited in efficiency principally by slope and/or figure errors. We calculate the effect of slope errors on the theoretical energy resolution and focus spot size of a typical analyzer design using a ray-tracing code to ensure that there are no unforeseen contributions to the energy resolution and efficiency. We also present measurements of the slope errors of the atomic planes for a prototype, spherically bent, strain-relief grooved analyzer as proof that it is in principle possible to obtain the slope and figure error limits required for a high efficiency meV resolution backscattering crystal. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1145732
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