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  • 1
    Electronic Resource
    Electronic Resource
    The Catalysis of the H2-D2O Exchange by Aqueous Buffer Solutions1 (1958)
    s.l. : American Chemical Society
    Journal of the American Chemical Society 80 (1958), S. 64-65 
    Details
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ja01534a018
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  • 2
    Electronic Resource
    Electronic Resource
    Harold C. Urey 1893–1981 (1982)
    Springer
    Journal of molecular evolution 18 (1982), S. 149-149 
    Details
    ISSN: 1432-1432
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01733039
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  • 3
    Electronic Resource
    Electronic Resource
    Prebiotic synthesis of histidine (1990)
    Springer
    Journal of molecular evolution 31 (1990), S. 167-174 
    Details
    ISSN: 1432-1432
    Keywords: Prebiotic His synthesis ; Erythrose ; Imidazole-4-acetaldehyde
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Summary The prebiotic formation of histidine (His) has been accomplished experimentally by the reacton of erythrose with formamidine followed by a Strecker synthesis. In the first step of this reaction sequence, the formation of imidazole-4-acetaldehyde took place by the condensation of erythrose and formamidine, two compounds that are known to be formed under prebiotic conditions. In a second step, the imidazole-4-acetaldehyde was converted to His, without isolation of the reaction products by adding HCN and ammonia to the reaction mixture. LC, HPLC, thermospray liquid chromatography-mass spectrometry, and tandem mass spectrometry were used to identify the product, which was obtained in a yield of 3.5% based on the ratio of His/erythrose. This is a new chemical synthesis of one of the basic amino acids which has not been synthesized prebiotically until now.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02109492
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  • 4
    Electronic Resource
    Electronic Resource
    Harold C. Urey 1983–1981 (1981)
    Springer
    Journal of molecular evolution 17 (1981), S. 263-264 
    Details
    ISSN: 1432-1432
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01795747
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  • 5
    Electronic Resource
    Electronic Resource
    Extremal dynamics: A unifying physical explanation of fractals, 1/f noise, and activated processes (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 2617-2628 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The properties of physical systems whose observable properties depend upon random exceedances of critical parameters are quantitatively examined. Using extreme value theory, the dynamical behavior of this broad class of systems is derived. This class of systems can exhibit two characteristic signatures: generalized activation when far from equilibrium and noise with a characteristic power spectrum (including 1/f ) when in quasiequilibrium. Fractal structures can also arise from these systems. It is thus demonstrated that generalized activation, noise, and fractals, in some cases, are simply different manifestations of a single common dynamical principle, which is termed "extremal dynamics.'' Examples of physical processes governed by extremal dynamics are discussed, including data loss of nonvolatile memories and dielectric breakdown.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353079
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  • 6
    Electronic Resource
    Electronic Resource
    A general centroid determination methodology, with application to multilayer dielectric structures and thermally stimulated current measurements (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 5068-5077 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A general methodology is developed to experimentally characterize the spatial distribution of occupied traps in dielectric films on a semiconductor. The effects of parasitics such as leakage, charge transport through more than one interface, and interface trap charge are quantitatively addressed. Charge transport with contributions from multiple charge species is rigorously treated. The methodology is independent of the charge transport mechanism(s), and is directly applicable to multilayer dielectric structures. The centroid capacitance, rather than the centroid itself, is introduced as the fundamental quantity that permits the generic analysis of multilayer structures. In particular, the form of many equations describing stacked dielectric structures becomes independent of the number of layers comprising the stack if they are expressed in terms of the centroid capacitance and/or the flatband voltage. The experimental methodology is illustrated with an application using thermally stimulated current (TSC) measurements. The centroid of changes (via thermal emission) in the amount of trapped charge was determined for two different samples of a triple-layer dielectric structure. A direct consequence of the TSC analyses is the rigorous proof that changes in interface trap charge can contribute, though typically not significantly, to thermally stimulated current.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354291
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  • 7
    Electronic Resource
    Electronic Resource
    Physics of the ferroelectric nonvolatile memory field effect transistor (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 5999-6010 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The operation of the ferroelectric nonvolatile memory field effect transistor is theoretically examined extensively for the first time. The ferroelectric transistor device properties are derived by combining the silicon charge-sheet model of metal-oxide-semiconductor field-effect transistor device operation with Maxwell's first equation which describes the properties of the ferroelectric film. The model we present describes ferroelectric transistor I-V and C-V behavior when time-dependent voltages are applied which result in hysteresis due to ferroelectric switching. The theoretical results provide unique insight into the effects of geometrical and material parameters on the electrical properties of the transistor. These parameters include the ferroelectric spontaneous and remanent polarization, the coercive field, and dielectric layer thicknesses. We have found that the conventional concept of threshold voltage is no longer useful, and that increasing the spontaneous polarization has only a minor impact on memory operation due to reverse dipole switching of the ferroelectric layer. The application of the model to optimize design and fabrication parameters is illustrated with a virtual prototyping example. The model is also used to develop a practical testing methodology for this unique device.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351910
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  • 8
    Electronic Resource
    Electronic Resource
    A predictive model of electron and hole decay in silicon-nitride-oxide-silicon nonvolatile memory transistors experiencing arbitrary thermal environments (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 4569-4576 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A model is presented which accurately predicts the threshold voltage decay of both the excess electron and excess hole logic states of silicon-nitride-oxide-silicon nonvolatile memory transistors in thermally varying environments. The model predictions require as inputs the initial occupied trap distributions for both trapped holes and trapped electrons. A technique is presented to determine all model parameters, including the initial occupied trap distributions, by performing a single practical experiment with a specific thermal scenario. Once the model parameters are determined by this single experiment, the threshold voltage is predicted (with no adjustable parameters) for arbitrary time dependent thermal environments. Retention experiments are performed for a wide range of thermal environments which are changed during the charge decay process. The accuracy of the model predictions is verified by experimental data.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350341
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  • 9
    Electronic Resource
    Electronic Resource
    Effect of temperature on data retention of silicon-oxide-nitride-oxide-semiconductor nonvolatile memory transistors (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 7115-7124 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The discharge behavior of silicon-oxide-nitride-oxide-semiconductor nonvolatile memory transistors is investigated for a range of programming and storage temperatures spanning −55 °C to 200 °C. A number of empirical observations strongly limit the nature of the mechanisms that govern charge injection and decay. Both electrons and holes contribute to the charge storage properties of the transistors, and the decay properties of both are thermally activated with a continuous distribution of activation energies (trap depths). Charge decay, for both charge states, is negligibly limited by mechanisms other than those which are strongly thermally activated. The programming temperature, relative to the storage temperature, significantly impacts the retention time of the excess electron state, while not affecting the long term decay of the excess hole state. The experimental results also have significant implications regarding proper retention screening techniques and nonvolatile ROM programming techniques.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345062
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  • 10
    Electronic Resource
    Electronic Resource
    Modeling ferroelectric capacitor switching with asymmetric nonperiodic input signals and arbitrary initial conditions (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 2849-2860 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The switching behavior of ferroelectric capacitors experiencing arbitrary time-dependent electric fields and arbitrary initial conditions is investigated both theoretically and experimentally. A general approach for modeling incomplete dipole switching in ferroelectric capacitors is used to derive equations describing the electrical behavior of a simple characterization circuit with arbitrary initial conditions and arbitrary time-dependent applied voltages. The equations include four experimentally determined parameters: the remanent and spontaneous polarizations, the coercive field, and the ferroelectric dielectric constant. Once these model parameters are determined from a single high-frequency sinusoidal hysteresis loop, model predictions are made with no adjustable parameters. The circuit behavior for both sinusoidal and trapezoidal input signals is computed, including asymmetric and nonperiodic signals as well as several different initial conditions. The accuracy of the model predictions is quantitatively verified with experimental data. The approach is also utilized to model the switching behavior of a ferroelectric capacitor containing a sheet of space charge. It is found that hysteresis loop distortions resulting from ionizing radiation resemble those caused by a sheet of space charge. This quantitative modeling capability facilitates the optimization of the design of ferroelectric memory circuits by minimizing the amount of required electrical testing and characterization. It can also be used to facilitate the identification and understanding of degradation mechanisms occurring in ferroelectric thin films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349348
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