ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Low resistance p-layers are achieved in this paper using a graphite cap to protect SiCsurface from out-diffusion of Si during high temperature post-implantation annealing, which iscarried out to maximize the activation of Al dopant in 4H-SiC. With a graphite layer converted fromphotoresist, as high as 1700 and 1800oC post-implantation annealing is able to be used. Low RMSroughness of surface after high temperature annealing shows the effectiveness of the graphite cap.Small sheet resistance and resistivity are also achieved from the high temperature annealing. At roomtemperature, sheet resistances of 9.8 and 1.3 k[removed info]/□, and the corresponding resistivities of 235 and31 m[removed info]-cm are obtained from 1700 and 1800oC annealed samples, respectively. The Al ionizationenergy extracted from Arrhenius plot is also close to the typical reported values. Therefore, it can beconcluded that, using graphite cap could help to activate the Al dopant effectively during hightemperature annealing
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/17/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.556-557.567.pdf
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