ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Cubic GaN, AlxGa1-xN/GaN and InyGa1-yN/GaN multiple quantum well (MQW) layerswere grown by plasma assisted molecular beam epitaxy on 200 &m thick free standing 3C-SiCsubstrates. The influence of the surface roughness of the 3C-SiC substrates and the influence ofmetal coverage during growth are discussed. Optimum growth conditions of c-III nitrides exist,when a one monolayer Ga coverage is formed at the growing surface. The improvement of thestructural properties of cubic III-nitride layers and multilayers grown on 3C-SiC substrates isdemonstrated by 1 μm thick c-GaN layers with a minimum x-ray rocking curve width of 16 arcmin,and by c-AlGaN/GaN and c-InGaN/GaN MQWs which showed up to five satellite peaks in X-raydiffraction, respectively
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/14/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.1489.pdf
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