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  • 1
    Electronic Resource
    Electronic Resource
    Icosahedral symmetry in the Al85Cr15 quasi-crystalline material formed by ion irradiation (1986)
    Springer
    Il nuovo cimento della Società Italiana di Fisica 7 (1986), S. 134-137 
    Details
    ISSN: 0392-6737
    Keywords: Electron microscopy determinations
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Description / Table of Contents: Riassunto Si mostra che lo stato quasi cristallino può essere formato in AlCr mediante una trasformazione dello stato solido dalla fase amorfa mediante irradiazione ionica a 150°C con ioni di Xe a 600 keV.
    Notes: Summary We have shown that the quasi-crystalline state can be formed in AlCr by a solid-state transformation from the amorphous phase by ion irradiation at 150°C with 600 keV Xe ions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02452402
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  • 2
    Electronic Resource
    Electronic Resource
    Thermal and ion-induced, metastable-cubic Al3M phases in Al-Ti and Al-Hf thin films (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 4478-4483 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thermal and ion-induced reactions in codeposited, multilayer and bilayer Al-Ti and Al-Hf structures were studied by transmission electron microscopy and Rutherford backscattering. A metastable Al3 M (M being Ti or Hf) phase was found by both ion beam mixing and thermal annealing. The metastable phases have a cubic structure with lattice parameters a=3.98±0.01 A(ring) and 4.08±0.01 A(ring) for Al-Ti and Al-Hf, respectively, at a composition of Al3M. The metastable phase transforms to the tetragonal equilibrium compound at annealing temperatures approximately 400 °C. The effectiveness of ion beam mixing is demonstrated by its lower formation temperatures and faster reaction rates. The thermally induced metastable phase formation is ascribed to a lower nucleation barrier than that of the equilibrium phase.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341272
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  • 3
    Electronic Resource
    Electronic Resource
    Au-Ag ion mixing rate—disagreement with theory resolved (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2497-2499 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Measurements of the low-temperature mixing of several 5d–4d bilayers by 600 keV Xe ions have strongly supported the assumption of a thermal spike mechanism. Quite disturbingly, however, the Au-Ag mixing rate appeared to exceed theoretical predictions by about a factor of 3. A closer examination of this system shows the discrepancy to be caused by the formation of a strongly nonuniform Au surface structure during irradiation. An improved value for the mixing rate is in reasonable agreement with predictions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102010
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  • 4
    Electronic Resource
    Electronic Resource
    The dependence of low-temperature ion mixing of Y/Si bilayers on nuclear energy deposition (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 7528-7532 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Bilayers of yttrium and amorphous silicon were irradiated with 600-keV Ar++, Kr++, and Xe++ ions at temperatures between 80 and 372 K. The mixing rates were considerably larger than rates predicted by a model based on overlapping thermal spikes, as well as predictions generated by an extension of the model to the case of nonoverlapping thermal spikes. However, the experimental mixing rates did exhibit a linear dependence on the nuclear energy deposited at the interface. This agrees qualitatively with the premise of nonoverlapping thermal spikes. We compare our results with other ion-mixed medium-Z, metal/metal systems which also show this tendency.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348929
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  • 5
    Electronic Resource
    Electronic Resource
    Stability of metallic CsCl-structured alloys under ion irradiation (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 4011-4016 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The ion irradiation stability of the CsCl phases CoAl, IrAl, SiRu, and AuZn has been investigated. Thin-film (∼500-A(ring)-thick) transmission electron microscopy samples were irradiated with Xe to a maximum dose of 4×1015 ions/cm2 at room temperature. Irradiation-induced transformations in the compound samples were examined by transmission electron diffraction. The alloys CoAl, IrAl, and AuZn remained crystalline while SiRu became amorphous. Analysis of our findings and other previously reported experimental results indicate that CsCl compound stability under ion irradiation is strongly correlated with atomic mobilities.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336706
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  • 6
    Electronic Resource
    Electronic Resource
    On the validity of a thermal spike mixing model for low-Z metals (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 1364-1366 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low temperature ion beam mixing rates for Cu-Ti, Ni-Ti, and Fe-Ti layers have been found to be significantly lower than predicted by a popular semi-empirical thermal spike model. It has been proposed that the unavoidable hydrogen contamination of the as-deposited Ti films may have reduced the mixing rates, but the measurement of even lower mixing rates for Fe-V and Fe-Co bilayers shows the discrepancy to be more fundamental. Still, a systematic dependence on heat of mixing suggests that some sort of diffusional (thermal spike?) mechanism is involved.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346685
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  • 7
    Electronic Resource
    Electronic Resource
    Low-temperature ion mixing of yttrium and silicon (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 1288-1292 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ion mixing of yttrium and amorphous silicon bilayers was measured as a function of fluence and temperature using 600-keV Xe++ ions between 80 and 498 K. At 80 K the mixing rate was in excellent agreement with a theoretical model based on thermal spike mixing. For temperatures up to ≈372 K, the temperature-dependent contributions accounted for less than 50% of the overall mixing rate. For mixing at or above 400 K, our results revealed the formation of an ion-beam-induced orthorhombic Y-Si phase, which is not normally formed during thermal anneals of such bilayers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345678
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  • 8
    Electronic Resource
    Electronic Resource
    On the mixing of Cu and Y by Xe ions (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 3298-3303 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: As part of an ongoing effort to produce high-Tc superconducting layers by ion-beam mixing, the mixing of Cu and Y was studied at both liquid nitrogen and room temperature, using 600-keV Xe ions and Y film thicknesses representative of multilayer mixing experiments. At low temperatures the mixing rate was found to agree with predictions based on thermal spike effects. At higher temperature the mixing is dominated by the rapid formation of the Cu7 Y phase.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344124
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  • 9
    Electronic Resource
    Electronic Resource
    Ion-induced formation of stable and metastable phases in the Y-Si system (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1848-1850 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Bilayers of yttrium and amorphous silicon have been irradiated with 60 keV inert ions. Between liquid-nitrogen temperature and 100 °C, ion mixing resulted in an amorphous alloy of Y and Si. For temperatures of 125–190 °C, we observed formation of the YSi phase. YSi is not formed during thermal anneals of bilayers. Ion mixing at higher temperatures (≥205 °C) results in the formation of the stable YSi1.7 phase. Such sequential silicide formation has not been observed for comparable rare-earth silicides. The minimum temperatures for ion-induced YSi1.7 formation agrees with the prediction by a simple model which correlates vacancy mobility to phase transformation. The YSi formation temperature is associated with the onset of radiation-enhanced diffusion. This temperature does not correlate well with the prediction of the model, but agrees with a scaling based on the average cohesive energy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105076
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  • 10
    Electronic Resource
    Electronic Resource
    Do thermal spikes contribute to the ion-induced mixing of Ni into Zr, Ti, and Pd? (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1407-1409 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-temperature ion beam mixing rates for Ni-Ti, Zr-Ni, and Pd-Ni bilayers significantly exceeded binary collision estimates, and appeared quite sensitive to thermodynamic driving forces. In the absence of a temperature dependence such a behavior is commonly ascribed to interdiffusion within thermal spikes. However, the Ni-Ti mixing rate was seen to vary linearly with nuclear damage energy for irradiation with 600 keV Xe, Kr, or Ar, 300 keV Ne or N, or 200 keV N ions, or 1 MeV Au ions (literature value). This excludes overlapping thermal spikes. An expression was derived for mixing due to nonoverlapping thermal spikes, but this could also not explain our results.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103449
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