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  • 1
    ISSN: 1432-0487
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology
    Description / Table of Contents: Übersicht Bei der digitalen Simulation von Starkstrom-Übertragungssystemen in Echtzeit ist die parallele Datenverarbeitung weit verbreitet. In diesem Beitrag wird ein neues Modell vorgestellt, in welchem das System in mehrere Module aufgespaltet wird, deren Verhalten dann parallel in Echtzeit simuliert werden kann. Eine dazu geeignete Integrationsmethode wird angegeben, mit deren Hilfe die elektromagnetischen und elektromechanischen Ausgleichsvorgänge berechnet werden, die bei der Aufschaltung einer Synchronmaschine auf eine unbelastete Doppelkreis-Hochspannungs-Drehstromübertragungsstrecke (DHTT) auftreten. Außerdem werden die Ausgleichsvorgänge ermittelt, die bei der automatischen. Synchronisation einer am anderen Ende zugeschalteten Synchronmaschine auftreten, und schließlich der Zustand untersucht, wenn beide Enden der DHTT parallel von Synchronmaschinen gespeist werden. Dieses numerische Beispiel zeigt, daß das vorliegende Modell für eine digitale Simulation des Starkstrom systems in Echtzeit geeignet ist.
    Notes: Contents Parallel processing has been widely employed in real-time digital simulation of power transmission systems. This paper presents a new model using multiple modules and its integration method. According to this model and the given digital integration method a digital example simulation is carried out covering the following operating phases: electromagnetic and electromechanical transients after connecting a synchronous machine to the idle double-circuit high-voltage three-phase power transmission line (DHTT), automatic synchronization of the synchronous machine at the far end of the DHTT, parallel operation of the power transmission system (a DHTT with synchronous machines at both ends). The results show that the new model is fit for real-time digital simulation of this system.
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 1432-0487
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology
    Description / Table of Contents: Übersicht  Es wird ein Modell eines typischen Stromversorgungssystems im Fehlerzustand des Moduls DHTT durch Anwendung der Multimodulen-Kopplungsmethode (Feng Z, Liao X, Unbehauen R (1998) Electrical Engineering 81: 121–127) aufgestellt. Die nach den Simulationsmodellen entwickelte Software kann auf einem PC Pentium III 500 MHz in Echtzeit laufen. Die numerischen Ergebnisse zeigen, daß die Modelle für eine digitale Echtzeitsimulation geeignet sind.
    Notes: Contents  A model of a typical current supply system in the fault operation state of the module DHTT is established by applying the multiple module coupling method (Feng Z, Liao X, Unbehauen R (1998) Electrical Engineering 81: 121–127). The software developed according to the simulation models can run on a PC Pentium III 500 MHz in real-time. The numerical results show that the models are fit for digital real-time simulation.
    Type of Medium: Electronic Resource
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  • 3
    ISSN: 1432-0487
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology
    Description / Table of Contents: Übersicht Bei der digitalen Simulation von Starkstrom- Übertragungssystemen in Echtzeit ist die parallele Datenverarbeitung weit verbreitet. In diesem Beitrag wird ein neues Modell vorgestellt, in welchem das System in mehrere Module aufgespaltet wird, deren Verhalten dann parallel in Echtzeit simuliert werden kann. Eine dazu geeignete Integrationsmethode wird angegeben, mit deren Hilfe die elektromagnetischen und elektromechanischen Ausgleichsvorgänge berechnet werden, die bei der Aufschaltung einer Synchronmaschine auf eine unbelastete Doppelkreis-Hochspannungs-Drehstromübertragungsstrecke (DHTT) auftreten. Außerdem werden die Ausgleichsvorgänge ermittelt, die bei der automatischen Synchronisation einer am anderen Ende zugeschalteten Synchronmaschine auftreten, und schließlich der Zustand untersucht, wenn beide Enden der DHTT parallel von Synchronmaschinen gespeist werden. Dieses numerische Beispiel zeigt, daß das vorliegende Modell für eine digitale Simulation des Starkstrom systems in Echtzeit geeignet ist.
    Notes: Contents Parallel processing has been widely employed in real-time digital simulation of power transmission systems. This paper presents a new model using multiple modules and its integration method. According to this model and the given digital integration method a digital example simulation is carried out covering the following operating phases: electromagnetic and electromechanical transients after connecting a synchronous machine to the idle double-circuit high-voltage three-phase power transmission line (DHTT), automatic synchronization of the synchronous machine at the far end of the DHTT, parallel operation of the power transmission system (a DHTT with synchronous machines at both ends). The results show that the new model is fit for real-time digital simulation of this system.
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  • 4
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 514-516 (May 2006), p. 18-22 
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: A series of amorphous silicon carbide films were prepared by plasma enhanced chemical vapor deposition technique on (100) silicon wafers by using methane, silane, and hydrogen as reactive resources. A very thin (around 15 Å) gold film was evaporated on the half area of the a- SiC:H films to investigate the metal induced crystallization effect. Then the a-SiC:H films were annealed at 1100 0C for 1 hour in the nitrogen atmosphere. Fourier transform infrared spectroscopy(FTIR), X-Ray diffraction (XRD), and scanning electron microscopy (SEM) were employed to analyze the microstructure, composition and surface morphology of the films. The influences of the high temperature annealing on the microstructure of a-SiC:H film and the metal induced metallization were investigated
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Gene 88 (1990), S. 107-111 
    ISSN: 0378-1119
    Keywords: Recombinant DNA ; fidelity ; frame shift ; phage T7 DNA polymerase ; reverse transcriptase ; transition ; transversion
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology
    Type of Medium: Electronic Resource
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  • 6
    ISSN: 0162-0134
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 2725-2729 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ge(Si)/Si(001) coherent islands grown at 700 °C by molecular beam epitaxy were investigated using transmission electron microscopy. [001] on-zone bright-field diffraction contrast imaging and image simulation techniques were used to investigate the structure of these coherent islands. Comparison of simulated and experimental images indicates nonuniform composition distribution within the coherent islands when the islands were grown at high temperatures (700 °C), but uniform composition for growth at lower temperatures (600 °C). © 2001 American Institute of Physics.
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 1258-1260 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ge/Si(001) multilayer islands produced by gas-source molecular-beam epitaxy at 575 °C were investigated using energy-filtering transmission electron microscopy. Results show, for as-grown samples, not only a continuous enlargement of island size in upper layers but also a continuous increase of Ge concentration within islands in upper layers. As a result of the increasing island size and Ge concentration within the islands, the island density in upper layers decreases. For samples annealed at 900 °C for 5 min, the aspect ratio of buried islands increases significantly, and the average Ge concentration within islands of different layers becomes uniform. © 2001 American Institute of Physics.
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 1304-1306 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The composition distribution of Ge(Si)/Si (001) islands grown at 700 °C by molecular beam epitaxy is investigated using high-spatial resolution x-ray energy dispersive spectrometry in a scanning transmission electron microscope. Island shapes are investigated using cross-section transmission electron microscopy. Results show nonuniformity of the composition distribution in the islands, which affects the evolution of the aspect ratios of height-to-base diameter of dislocated islands. © 2000 American Institute of Physics.
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2089-2091 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-resolution transmission electron microscopy and selected area electron diffraction have been used to study Hg0.8Cd0.2Te wafer. Two kinds of chemical composition modulated structures were found. One is a one-dimensional modulation with modulated wave vector q*=(a*−b*)/5.6 and the other two-dimensional modulation with modulated wave vectors q1*=(a*−b*)/5.6 and q2*=(a*−b*)/11.2−0.22c*. Both structures have a common modulated wavelength of 2.54 nm. © 1995 American Institute of Physics.
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