ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
A sublimation epitaxial method, referred to as the Closed Space Technique (CST) wasadopted to produce thick SiC epitaxial layers for power device applications. In this study, we aimed tosystematically investigate surface morphologies and electrical properties of SiC epitaxial layersgrown with varying a SiC/Al ratio in a SiC source powder during the sublimation growth using theCST method. It was confirmed that the acceptor concentration of epitaxial layer was continuouslydecreased with increasing the SiC/Al ratio. The blue light emission was successfully observed on aPN diode structure fabricated with the p-type SiC epitaxial layer. Furthermore, 4H-SiC MESFETshaving a micron-gate length were fabricated using a lithography process and their current-voltageperformances were characterized
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/17/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.556-557.153.pdf
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