ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Copper via filling is an important factor in 3D stacking interconnection of SiP (system in package). As the packaging density is getting higher, the size of via is getting smaller. When DC electroplating is applied, a defect-free hole cannot be obtained in a small size hole. To prevent the defects in holes, pulse and pulse reverse current was applied in copper via filling. The size of 50, 70,100[removed info] in diameter and 100[removed info] in height. The holes were prepared by DRIE method. TaN and Ta was sputtered for copper diffusion barrier. Via specimen were filled by DC, pulse and pulse-reverse current electroplating methods. The effects of additives and current types on copper deposits were investigated. Vertical and horizontal cross section of the via were observed by SEM to find the defects in via. When pulse-reverse electroplating method was used, defect free via were uccessfully obtained
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/12/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.510-511.942.pdf
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