Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
86 (1999), S. 3792-3796
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Based on semiempirical quantum-chemical calculations, the electronic band structure of β-Ga2O3 is presented and the formation and properties of oxygen vacancies are analyzed. The equilibrium geometries and formation energies of neutral and doubly ionized vacancies were calculated. Using the calculated donor level positions of the vacancies, the high temperature n-type conduction is explained. The vacancy concentration is obtained by fitting to the experimental resistivity and electron mobility. © 1999 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.371289
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