ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The results of high-frequency mixing experiments performed upon parallel quantum point contacts defined in the two-dimensional electron gas of an AlxGa1−xAs/GaAs heterostructure are presented. The parallel geometry, fabricated using a novel double-resist technology, enables the point-contact device to be impedance matched over a wide frequency range and, in addition, increases the power levels of the mixing signal while simultaneously reducing the parasitic source-drain capacitance. Here, we consider two parallel quantum point-contact devices with 155 and 110 point contacts, respectively; both devices operated successfully at liquid helium and liquid nitrogen temperatures with a minimal conversion loss of 13 dB. © 1997 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.119139
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