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  • 1
    Electronic Resource
    Electronic Resource
    Effects of overheating in a single-electron transistor (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 3623-3631 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Heating of a single-electron transistor (SET) caused by the current flowing through it is considered. The current and the temperature increase should be calculated self-consistently taking into account various paths of the heat drain. Even if there is no heat drain from the central electrode of the SET due to transfer of phonons, the temperature of this electrode remains finite because electron tunneling decreases the temperature difference between the central and outer electrodes. Overheating effects can cause hysteresis in the I-V curve of the SET in the vicinity of the Coulomb blockade threshold.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357424
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  • 2
    Electronic Resource
    Electronic Resource
    A numerical study of the accuracy of single-electron current standards (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 9155-9165 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have developed an algorithm for the analysis of single-electron standards of dc current. The algorithm is based on numerical solution of the master equation describing the time evolution of the probabilities of the electric charge states of the system, with iterative refinement of the operational set of states. To illustrate the method we have analyzed several standards of dc current. We have shown that the accuracy of the single-electron pump may be improved dramatically at lower frequencies and temperatures by replacing the traditional triangular drive wave forms with a special step-like drive. We have also shown that the M-junction turnstile does not achieve the accuracy of the 5-junction pump with the same values of capacitances and resistances even at M=8. However, a hybrid M-junction pump/turnstile system which is easier to control than the 5-junction pump, exhibits a comparable accuracy already at M=6. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362587
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  • 3
    Electronic Resource
    Electronic Resource
    A numerical study of the dynamics and statistics of single electron systems (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 3238-3251 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe a new and efficient method for the numerical study of the dynamics and statistics of single electron systems presenting arbitrary combinations of small tunnel junctions, capacitances, and voltage sources. The method is based on numerical solution of a linear matrix equation for the vector of probabilities of various electric charge states of the system, with iterative refining of the operational set of states. The method is able to describe very small deviations from the "classical'' behavior of a system, due to the finite speed of applied signals, thermal activation, and macroscopic quantum tunneling of charge (cotunneling). As an illustration, probability of dynamic and static errors in two single electron memory cells with 6 and 8 tunnel junctions have been calculated as a function of bias voltage, temperature, and switching speed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360752
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  • 4
    Electronic Resource
    Electronic Resource
    Single-electron quantization of electric field domains in slim semiconductor superlattices (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 3282-3284 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is shown that dc I-V curves of the semiconductor superlattices of small (practically, submicron) cross section should exhibit oscillations with the dc voltage period e/C, where C is the capacitance between adjacent conducting layers. These oscillations are due to the single-electron quantization of electric charge of the boundaries of static high-electric-field domains.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109100
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  • 5
    Electronic Resource
    Electronic Resource
    Arrays of normal metal tunnel junctions in weak Coulomb blockade regime (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2096-2098 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Universal features of I–V characteristics of one-dimensional arrays of normal metal tunnel junctions have been tested against inhomogenities in the junction parameters, number of junctions in the array, and magnetic field. We find that the differential conductance versus bias voltage obeys the analytic form to within 1% if the fabrication errors are smaller than 10% in junction areas, and if the array has more than ten junctions. Furthermore, the universal relation is insensitive to magnetic field at least up to 8 T. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115090
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  • 6
    Electronic Resource
    Electronic Resource
    TASERs: Possible dc pumped terahertz lasers using interwell transitions in semiconductor heterostructures (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1865-1867 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have carried out a theoretical analysis of a possibility to generate coherent continuous-wave terahertz radiation using double-quantum-well heterostructures. The lasing should take place due to inversed population of the wells, created by electron flow through the structure under the effect of applied dc voltage. Estimates show that, e.g., 3 THz radiation with a relatively narrow line (Δf/f(approximately-less-than)10−5) and power of the order of 0.1 mW may be generated using structures with area as small as ∼100 μm2, at temperatures up to ∼30 K. For the experimental implementation of this opportunity, a special design is suggested to reduce absorption of terahertz radiation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112865
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  • 7
    Electronic Resource
    Electronic Resource
    Accuracy of the single-electron pump using an optimized step-like rf drive waveform (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 1858-1860 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have performed an optimization of those parameters of a single-electron pump that may influence the accuracy of this device as a standard of dc current. Two types of rf drive were considered: the traditional triangular waveform and a step-like waveform. We have shown that, after optimization, the accuracy of the pump may be improved considerably in a wide range of drive frequencies, especially at low temperatures, using the step-like waveform. For example, the error of a five-junction pump with junction capacitances C=0.1 fF at 100 mK and 10 MHz may be as small as 10−13. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117457
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  • 8
    Electronic Resource
    Electronic Resource
    Single-electron transistor logic (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1954-1956 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present the results of numerical simulations of a functionally complete set of complementary logic circuits based on capacitively coupled single-electron transistors (CSETs). The family includes an inverter/buffer stage, as well as two-input NOR, NAND, and XOR gates, all using similar tunnel junctions, and the same dc bias voltage and logic levels. Maximum operation temperature, switching speed, power consumption, noise tolerances, error rate, and critical parameter margins of the basic gates have been estimated. When combined with the data from a preliminary geometrical analysis, the results indicate that implementation of the CSET logic family for operation at T∼20 K will require fabrication of structures with ∼2-nm-wide islands separated by ∼1-nm-wide tunnel gaps. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115637
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  • 9
    Electronic Resource
    Electronic Resource
    Correlated single-electron tunneling via mesoscopic metal particles: Effects of the energy quantization (1990)
    Springer
    Journal of low temperature physics 80 (1990), S. 173-185 
    Details
    ISSN: 1573-7357
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The existing theory of correlated single-electron tunneling in the double normalmetal tunnel junction is extended to the case of an ultrasmall central electrode of the structure. It is shown that the form of theI–V curve of such a system depends on the energy relaxation rate in this electrode. For realistic values of the relaxation rate, the large-scale shape of the dcI–V curve, which is associated with Coulomb correlations, is close to that following from the earlier theory. However, theI–V curve should also exhibit small-scale singularities reflecting the structure of the energy spectrum of the central electrode.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00683484
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  • 10
    Electronic Resource
    Electronic Resource
    “Consumable plasmotron” remelting (CPR) (1974)
    Springer
    Metallurgist 18 (1974), S. 743-747 
    Details
    ISSN: 1573-8892
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01171577
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