Springer Online Journal Archives 1860-2000
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Abstract A model for rapid thermal annealing of high dose arsenic-implanted silicon layers is proposed. The kinetics of arsenic clustering was taken into account. Assuming that all arsenic is initially electrically active, the clustering rate is found to be enhanced during the early stage of annealing in comparison with results reported for conventional furnace tempering . An influence of a low temperature preannealing on the diffusion behaviour of arsenic has not been observed.
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