ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A simulator using a coupled Schrödinger equation, Poisson equation and Fermi–Dirac statistics to analyze inversion layer quantization is shown to match the measured capacitance versus voltage data of thin oxide gate metal-on-insulator capacitance closely. The effects of bias voltage, oxide thickness and doping concentration on the charge centroid are presented. A simple empirical model for the alternating current charge centroid of the inversion layer is proposed. This model predicts the in-version layer capacitance or charge centroid in terms of Tox (oxide thickness), Vt (threshold voltage), and Vg (gate voltage) explicitly. © 1998 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.121671
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