ISSN:
1662-9779
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Physics
Notes:
In this paper, novel Ni Germanosilicide technology using the 1%-nitrogen doped Ni andpure Ni stack structure has been proposed for nano-scale CMOS technology. The Ni Germanosilicideis formed on the Si0.8Ge0.2 layer which is known as an optimal composition for strained siliconapplication. Proposed structure showed much better thermal stability than pure Ni case. Silicidecharacteristics such as the sheet resistance, the interface uniformity of silicide/SiGe, surfaceroughness, and depth profile of the Ni, Si, and Ge showed little degradation even with the hightemperature post-silicidation annealing at 600 [removed info] for 30 min. Therefore, the proposed method ishighly promising for nano-scale CMOS technology
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/23/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.121-123.623.pdf
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