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  • 1
    Electronic Resource
    Electronic Resource
    Electron emission and structure properties of cesiated carbon films prepared by negative carbon ion beam (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 2631-2635 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The work function, field emission property (turn-on field), and Auger electron spectroscopy of cesiated carbon films on Si (100) have been investigated for codeposition of Cs neutral and C− ion beams at different energies (25–150 eV). The higher energy (150 eV) C− ion beam produces the lower work function surface (1.1 eV) as well as sp3 rich carbon film. The work function depends both on cesium concentration as well as on the sp3 fraction in the carbon films. The turn-on field of the film can be as low as 7 V/μm. The thermal stability of the low work function surface has been investigated for postdeposition annealing up to 600 °C. An extremely high stability cold cathode has been made by forming cesium carbide. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366077
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  • 2
    Electronic Resource
    Electronic Resource
    A new solid-state cesium ion source (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 2704-2710 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A novel Cs+ion source combining the advantages of porous metal ionizers with those of zeolite emitters has been developed. Cesium ions are chemically stored in a cesium-mordenite solid electrolyte (Cs-M SE) pellet whose emitting surface is coated with a porous tungsten thin film. Cesium supply to the emitting surface is controlled by a voltage applied across the solid electrolyte pellet. Cs+ ion emission takes place on the surface of the porous tungsten electrode by surface ionization. The ionic conductivity of Cs+ ion in the Cs-M SE is of order of 10−5 Ω cm−1 at 1000 °C. The interface properties between electrolyte and electrodes play a major role in the cesium ion source. The cathode electrode interface (emitting electrode) determines the stability of the supply current density to the emitting surface. The lifetime of the source is found to depend on the anode interface. In a steady-state operation, an ion-emission current density of the order of 20 mA/cm2 has been extracted for 30 h at a total ion-emission current of 100 μA at 1000 °C. This corresponds to 10 C of extracted charge.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345458
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  • 3
    Electronic Resource
    Electronic Resource
    A novel rectilinear ion source for direct metal ion beam deposition (abstract) : Proceedings on the 6th international conference on ion sources (1996)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 908-908 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A novel rectilinear ion beam disposition technique has been developed for the direct metal ion beam deposition over a large area. The technology is based on the patent pending solid-state cesium ion beam technology. This technique has several unique advantages: (1) Due to the rectilinear shape of the ion beam, the ion beam length is expandable to any size up to several meters; (2) The technique uses no carrier gas or gas medium to generate the ion beams, thus, it is very compact and economical; (3) It is capable of producing various negative metal ion beams such as C, Si, Au, Ni, Fe, Mo, W, etc.; (4) The ion source is operating in a low energy range (10–500 eV) and it is ideal for the direct ion beam disposition. The prototype of the ion source has produced superior quality amorphous diamond films which exhibited superior hardness ((approximately-greater-than)60 GPa), low wear rate (〈108 mm3/Nm), low friction coefficient (〈0.1) and high transparency. Furthermore the coatings contain no hydrocarbon impurities, and exhibit atomically smooth surfaces (〈1 nm Ra) on the as-grown materials. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1147254
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  • 4
    Electronic Resource
    Electronic Resource
    Solid-state cesium ion gun for ion beam sputter deposition (1992)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 5671-5673 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A compact cesium ion gun, suitable for ion beam sputter deposition in high vacuum environment, has been developed. The gun uses a solid-state cesium ion source described previously. This gun is compact, stable, and easy to use. It requires none of the differential pumping or associated hardware necessary in designs using cesium vapor and porous tungsten ionizers. The gun produces a cesium ion beam of 0.2 mA at 5 keV. A beam diameter of 0.2 cm is measured at a target which is 3 cm apart from the exit aperture of the accelerator electrode. The sputter deposition rate is of the order of 100 A(ring)/min for several metal targets such as Au, Cu, Mo, W, and Ta, measured at 4 keV primary Cs+ ion beam energy and in a distance of 1.5 cm from the target. The lifetime of this gun is more than 20 C of cesium, which corresponds to 60 h of operation with an extraction current of 0.1 mA.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1143347
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  • 5
    Electronic Resource
    Electronic Resource
    Solid state cesium ion guns for surface studies (1990)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 61 (1990), S. 788-792 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Three cesium ion guns covering the energy range of 5–5000 V are described. These guns use a novel source of cesium ions that combine the advantages of porous metal ionizers with those of aluminosilicate emitters. Cesium ions are chemically stored in a solid electrolyte pellet and are thermionically emitted from a porous thin film of tungsten at the surface. Cesium supply to the emitting surface is controlled by applying a bias across the pellet. A total charge of 10.0 C can be extracted, corresponding to greater than 2000 h of lifetime with an extraction current of 1.0 μA. This source is compact, stable, and easy to use, and produces a beam with 〉99.5% purity. It requires none of the differential pumping or associated hardware necessary in designs using cesium vapor and porous tungsten ionizers. It has been used in ultrahigh-vacuum (UHV) experiments at pressures of 〈10−10 Torr with no significant gas load. Three different types of extraction optics are used depending on the energy range desired. For low-energy deposition, a simple space-charge-limited planar diode with a perveance of 1×10−7 A/V3/2 is used. Current densities of 10.0 μA/cm2 at the exit aperture for energies ≤20 V are typical. This type of source provides an alternative to vapor deposition with the advantage of precise flux calibration by integration of the ion current. For energies from 50 to 500 V and typical beam radii of 0.5 to 0.2 mm, a high perveance Pierce-type ion gun is used. This gun was designed with a perveance of 1×10−9 A/V3/2 and produces a beam with an effective temperature of 0.35 eV. For the energy range of 0.5 to 5 keV, the Pierce gun is used in conjunction with two Einzel lenses, enabling a large range of imaging ratios to be obtained. Beam radii of 60 to 300 μm are typical for beam currents of 50 nA to 1.0 μA. Results are presented and discussed for UHV studies of ion implantation, electronic surface changes induced by adsorbates, and negative secondary-ion mass spectrometry.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1141495
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  • 6
    Electronic Resource
    Electronic Resource
    Solid state cesium ion guns for surface studies (abstract) : International conference on ion sources (1990)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 61 (1990), S. 658-658 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Three cesium ion guns covering the energy range of 5–5000 V are described. These guns use a novel source of cesium ions that combine the advantages of porous metal ionizers with those of aluminosilicate emitters. Cesium ions are chemically stored in a solid electrolyte pellet and are thermionically emitted from a porous thin film of tungsten at the surface. Cesium supply to the emitting surface is controlled by applying a bias across the pellet. A total charge of 10.0 C can be extracted, corresponding to greater than 2000 h of lifetime with an extraction current of 1.0 μA. This source is compact, stable, and easy to use, and produces a beam with 〉99.5% purity. It requires none of the differential pumping or associated hardware necessary in designs using cesium vapor and porous tungsten ionizers. It has been used in ultrahigh-vacuum (UHV) experiments at pressures of 〈10−10 Torr with no significant gas load. Three different types of extraction optics are used depending on the energy range desired. For low-energy deposition, a simple space-charge-limited planar diode with a perveance of 1×10−7 A/V3/2 is used. Current densities of 10.0 μA/cm2 at the exit aperture for energies ≤20 V are typical. This type of source provides an alternative to vapor deposition with the advantage of precise flux calibration by integration of the ion current. For energies from 50 to 500 V and typical beam radii of 0.5 to 0.2 mm, a high perveance Pierce-type ion gun is used. This gun was designed with a perveance of 1×10−9 A/V3/2 and produces a beam with an effective temperature of 0.35 eV. For the energy range of 0.5 to 5 keV, the Pierce gun is used in conjunction with two Einzel lenses, enabling a large range of imaging ratios to be obtained. Beam radii of 60 to 300 μm are typical for beam currents of 50 nA to 1.0 μA. Results are presented and discussed for UHV studies of ion implantation, electronic surface changes induced by adsorbates, and negative secondary-ion mass spectrometry.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1141896
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  • 7
    Electronic Resource
    Electronic Resource
    Direct electronic transport through an ensemble of InAs self-assembled quantum dots (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 714-716 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electronic transport properties through an ensemble of InAs self-assembled quantum dots are reported. A metal–semiconductor–metal diode with self-assembled quantum dots has been fabricated. Clear staircases are observed in the current–voltage characteristics measured from the diode, and several peak structures are identified in the differential conductance. These conductance peaks are interpreted as due to resonant tunneling through the energy states of the self-assembled quantum dots. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122996
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  • 8
    Electronic Resource
    Electronic Resource
    Characteristics of heavily carbon-doped GaAs by LPMOCVD and critical layer thickness
    Amsterdam : Elsevier
    Journal of Crystal Growth 126 (1993), S. 441-446 
    Details
    ISSN: 0022-0248
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0022-0248(93)90049-3
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  • 9
    Electronic Resource
    Electronic Resource
    Carbon doping characteristics of GaAs and Al"0"."3Ga"0"."7As grown by atmospheric pressure metalorganic chemical vapor deposition using CCl"4
    Amsterdam : Elsevier
    Journal of Crystal Growth 141 (1994), S. 324-330 
    Details
    ISSN: 0022-0248
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0022-0248(94)90233-X
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  • 10
    Electronic Resource
    Electronic Resource
    The facet evolution during metalorganic vapor phase epitaxial growth on V-grooved high Miller index GaAs substrates
    Amsterdam : Elsevier
    Journal of Crystal Growth 139 (1994), S. 231-237 
    Details
    ISSN: 0022-0248
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0022-0248(94)90171-6
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