ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Transient currents in 6H-SiC n+p diodes and those in Si PIN diodes are compared, and thecarrier dynamic response to a heavy ion collision is analyzed using Technology Computer AidedDesign (TCAD). In case of 6H-SiC n+p diodes, it is found that the contribution of theambipolar-diffusion current to total transient current is extremely weak compared to that in Si PINdiodes, since plasma disruption is accelerated by the Auger recombination process in the former
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/20/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.600-603.1039.pdf
Permalink