ISSN:
1662-8985
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Morphology and crystal-quality of InAs/In0.53Ga0.47As/InP quantum dots (QDs) grown bymetal-organic vapor phase epitaxy (MOVPE) in N2 ambient using different growth modes havebeen studied. It is found that the morphology and crystal-quality of InAs QDs are dependant on thegrowth modes. After optimizing the dots’ growth modes, dots’ size dispersion and crystal-qualityare both improved greatly, resulting in the enhancement factor of ∼ 2.9 in the photoluminescence(PL) peak-intensity from single QD. When the dots are buried, the dot size decrease compared withthe free-standing dots due to the soon capping layer deposition during dots’ being buried. Thethermal activation energy measured is comparable to the valence-band offset in the QD systemcalculated by 8 kp theory model. This indicates the PL quenching induced by the interface defects issuppressed due to the defect density lowering in the QDs grown by such optimized growth mode
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/01/40/transtech_doi~10.4028%252Fwww.scientific.net%252FAMR.31.17.pdf
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