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  • 1
    Electronic Resource
    Electronic Resource
    Effect of coherent electromagnetic radiation on the ultrafast electron dynamics of laser excited bulk photoconductors (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 3215-3218 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We analyze the role of coherent terahertz radiation on the ultrafast electron dynamics of laser excited photoconductors. Generation of electromagnetic radiation is included within the framework of the usual hot carrier transport theory. A Monte Carlo scheme is used to study the resulting changes in the nonequilibrium electronic energy and transient drift velocity. Our results reveal a density dependent decrease in both quantities, due to reductions in the internal electric fields caused by radiative energy outflow. At densities above 2×1017 cm−3, we obtain a decrease in the transient velocity and expect delays in the onset of phonon emission.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354593
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  • 2
    Electronic Resource
    Electronic Resource
    Studies of high field conduction in diamond for electron beam controlled switching (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 4781-4787 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Experimental studies on a vertical metal-diamond-silicon switch structure have been conducted for potential pulsed power applications. Both the dc current-voltage characteristics and the transient switching response have been measured for a range of voltages. With a 1 μm diamond film, the switch has been seen to withstand electric fields up to 1.8 MV/cm. Our results show a polarity dependence which can be associated with current injection at the asymmetric contacts. Polarity effects were also observed in the presence of e-beam excitation, and arise due to nonuniform carrier generation near the diamond-silicon interface. Our switching transients were seen to follow the shape of the e-beam for a negative bias at the silicon substrate. For positive voltage values exceeding about 80 V however, the switch is seen to go into a persistent-photocurrent mode. This effect is a result of free carrier trapping within diamond and is enhanced by the double injection process.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352090
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  • 3
    Electronic Resource
    Electronic Resource
    Studies of electron-beam penetration and free-carrier generation in diamond films (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 1568-1574 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Experimental observations of the energy-dependent electron-beam penetration in type II-A natural diamond are reported. The experimental data are compared with results obtained from numerical Monte Carlo simulations, and the results are in very good agreement. The results also reveal that a threshold energy of about 125 keV is necessary for complete penetration for a 35 μm sample. It is found that over the 30–180 keV range, the energy dependence of the penetration depth and total path length exhibits a power-law relation. Monte Carlo simulations have also been performed to investigate the excess carrier-generation profiles within diamond for a set of incident e-beam energy distributions. The simulation results demonstrate the feasibility of tailoring the internal source function, and hence influencing the diffusion currents, the internal electric fields, and charge injection through the contacts.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354829
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  • 4
    Electronic Resource
    Electronic Resource
    Microscopic calculations of density and field-dependent electronic trapping via attractive Coulomb centers (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 1810-1817 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We examine the dynamics of electronic transitions into the shallow states of attractive impurity centers in GaAs through numerical simulations. The molecular dynamics based formulation circumvents the difficulty of having to evaluate "sticking functions,'' enables accurate computations of the phase-space distribution function, and allows microscopic treatment of both the carrier-phonon and carrier-carrier phenomena on an equal footing. Energy dependent trapping rates with and without the presence of external electric fields are obtained, and we consider situations involving both singly- and doubly-charged impurity centers. We show that initial trapping is reduced as a result of free-carrier screening, and hence detailed knowledge of both the trap density and the electronic concentration is necessary for a meaningful prediction of the trapping behavior. Finally, we also focus on modifications caused by electron-electron scattering, and find trapping enhancements due to the additional energy loss channel created by Auger-like phenomena.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354786
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  • 5
    Electronic Resource
    Electronic Resource
    Intersubband relaxation dynamics in ternary/binary quantum wells: Role of the electron-optical phonon interaction (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 3827-3835 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ensemble Monte Carlo calculations of the intersubband dynamics in binary-ternary double-heterostructure systems are presented. The presence of a ternary alloy has been explicitly incorporated to account for complexities arising from the multimode nature of phonons in real heterostructures. Electronic scattering rates are derived as a function of energy and quantum-well width for both confined and interface modes on the basis of a continuum model. Results of Monte Carlo simulations yield an intersubband time constant that is in reasonable agreement with the experimental value, but only when details of the phonon modes and their dispersion, spreading of the electronic wave functions due to poor confinement, and the phonon amplification effects are comprehensively included.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350872
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  • 6
    Electronic Resource
    Electronic Resource
    Monte Carlo study of minority electronic transport in InGaAs: Effects of phonon mode splitting and dynamically screened electron-hole interactions (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 4322-4324 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present an ensemble Monte Carlo simulation of electronic transport in p-type In0.53Ga0.47As. The effects of mixed phonon modes and of dynamically screened electron-hole scattering on the velocity-field characteristics are examined. Our results show that a two phonon model yields smaller velocities at low fields and higher values beyond the intervalley transfer threshold. The dynamic screening leads to a field dependent velocity enhancement at moderate carrier densities.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347164
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  • 7
    Electronic Resource
    Electronic Resource
    Monte Carlo calculation of electron drift characteristics and avalanche noise in bulk InAs (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 1331-1338 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Field dependent drift velocity results are presented for electron transport in bulk indium arsenide (InAs) material based on a Monte Carlo model, which includes an analytical treatment of band-to-band impact ionization. Avalanche multiplication and related excess noise factor (F) are computed as a function of device length and applied voltage. A decrease in F with increases in device length is obtained. The results suggest an inherent utility for InAs-based single-photon avalanche detectors, particularly around the 2 μm region of interest for atmospheric remote sensing applications. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1429771
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  • 8
    Electronic Resource
    Electronic Resource
    Transient and steady state simulations of internal temperature profiles in high-power semi-insulating GaAs photoconductive switches (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 1411-1417 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Simulations have been performed to determine the internal temperature profiles of high-power GaAs photoconductive switches in the presence of a current filament. No thermal instability is predicted below a power generation density level of about 1.3×1014 W/m3. This prediction is in keeping with recent experimental data on photoconductive semiconductor switch devices. It is shown that this power dissipation density threshold for stability exists under both dc and transient conditions. A simple model provides qualitative support for the power density threshold, and an explanation of the filamentary current radii that have been observed experimentally. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1335824
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  • 9
    Electronic Resource
    Electronic Resource
    Analysis of the temperature dependent thermal conductivity of silicon carbide for high temperature applications (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 265-269 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temperature dependent thermal conductivity of silicon carbide has been calculated taking into account the various phonon scattering mechanisms. The results compared very well with available experimental data. The inclusion of four-phonon processes is shown to be necessary for obtaining a good match. Several important phonon scattering parameters have been extracted in this study. Dislocations are shown to have a strong effect at 300 K, but not as much at the higher temperatures. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373651
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  • 10
    Electronic Resource
    Electronic Resource
    Simulation studies of persistent photoconductivity and filamentary conduction in opposed contact semi-insulating GaAs high power switches (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 3833-3843 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A self-consistent, two-dimensional, time-dependent, drift-diffusion model is developed to simulate the response of high power photoconductive switches. Effects of spatial inhomogeneities associated with the contact barrier potential are incorporated and shown to foster filamentation. Results of the dark current match the available experiment data. Persistent photoconductivity is shown to arise at a high bias even under the conditions of spatial uniformity. Filamentary currents require an inherent spatial inhomogeneity, and are more likely to occur for low optical excitation. Under strong uniform illumination, the spatial nonuniformities were quenched as a result of a polarization-induced collapse in the internal fields. However, strong electric fields resulting at the contacts create a bipolar plasma, and hence, a virtual "double injection." © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371295
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