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  • 1
    ISSN: 1573-482X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract A radiotracer sectioning technique that can be used successfully for measuring concentration profiles in diffused slices of single-crystal CdTe using anodic oxidation is described. The technique is useful when the penetration of diffusant is 〈5 μm which, if a good resolution is required, involves removing sections as thin as 0.1 μm. Investigations have shown that the best results are obtained using constant-current techniques, in which the voltage across the oxide layer is directly proportional to the thickness of the layer. This implies that the current passing through the layer is space-charge limited. In addition, mesa and non-mesa sectioning geometries are compared, and it is shown that the former sectioning geometry gives the more accurate profiles.
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  • 2
    ISSN: 1573-482X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The morphology of undiffused and iodine-diffused CdTe slices and its effect on iodine concentration profiles is discussed. Such CdTe slices were analysed using defect etching, scanning electron microscopy (SEM), infrared microscopy and secondary ion mass spectrometry (SIMS). The results suggest that during diffusion a layer of an iodine compound forms in the surface region of the CdTe while, over a limited range further into the material, clusters of either this or a similar compound form at defect sites causing a high degree of crystal distortion.
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  • 3
    ISSN: 1573-482X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Experiments carried out to fabricate HgxCd(1-x)Te by diffusing mercury into CdTe slices from the vapour, resulted in obtaining slices with a maximum value of x=0.004. Measurements on the diffusion of mercury into such slices, where 0≤x≤0.03, under saturated vapour pressure conditions, resulted in two component profiles, each profile giving two values of D. These results were similar to ones obtained earlier, indicating that the diffusion was rate-limiting. In addition, the diffusivities were found to be independent of x.
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  • 4
    ISSN: 1573-482X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The compatibility of iodine and CdTe is discussed and methods by which CdTe can be doped with iodine from the vapour phase using closed tube diffusion techniques are described. At elevated temperatures ( ⩾ 100
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  • 5
    ISSN: 1573-482X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The crystal quality of CdTe, Cd0.96Zn0.04Te and Zn-diffused CdTe slices containing 1×1022 cm-3 atoms of zinc at the surface of the slice was investigated by the technique of defect etching. In this investigation, the chemical etch. Inoue EAg-1 reagent, gave satisfactory results, with useful comparative values of the etch pit density obtained in these materials. The main result that was obtained was that the etch pit density in Zn-diffused CdTe was more than 10 times greater than in undiffused CdTe and that after the diffused layer had been removed the value was virtually the same as in undiffused CdTe. © 1998 Kluwer Academic Publishers
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  • 6
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: To gain insight into the nitrogen-related defects of InGaAsN, nitrogen vibrational mode spectra, Hall mobilities, and minority carrier diffusion lengths are examined for InGaAsN (1.1 eV band gap) grown by molecular beam epitaxy (MBE). Annealing promotes the formation of In–N bonding, and lateral carrier transport is limited by large scale ((very-much-greater-than)mean free path) material inhomogeneities. Comparing solar cell quantum efficiencies with our earlier results for devices grown by metalorganic chemical vapor deposition (MOCVD), we find significant electron diffusion in the MBE material (reversed from the hole diffusion in MOCVD material), and minority carrier diffusion in InGaAsN cannot be explained by a "universal," nitrogen-related defect. © 2002 American Institute of Physics.
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 729-731 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The design, growth by metalorganic chemical vapor deposition, and processing of an In0.07Ga0.93As0.98N0.02 solar cell, with 1.0 eV band gap, lattice matched to GaAs is described. The hole diffusion length in annealed, n-type InGaAsN is 0.6–0.8 μm, and solar cell internal quantum efficiencies 〉70% are obtained. Optical studies indicate that defects or impurities, from InGaAsN doping and nitrogen incorporation, limit solar cell performance. © 1999 American Institute of Physics.
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 4-6 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a real-time molecular beam epitaxy control system based on optical flux monitoring (OFM) that is capable of producing thin AlAs/GaAs layers of accurate thickness. We demonstrate the system's ability to detect and compensate for growth rate variations by growing AlAs/GaAs multi-quantum-well structures while deliberately ramping the GaAs growth rate to simulate a severe effusion cell instability. Results show that a sample grown under these conditions without OFM control (i.e., while using conventional timed shutter control) exhibited multiple photoluminescence peaks, indicating that its quantum wells differed in thickness, while a sample grown using OFM shutter control exhibited a single narrow peak, indicating that its quantum wells were nearly identical in width. Analysis of the OFM shutter control sample's photoluminescence linewidth shows that the resulting quantum-well thickness variation were less than 1%.
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1242-1244 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial films of AlAs0.16Sb0.84 and Al0.8Ga0.2As0.14Sb0.86 were grown lattice matched on (100) InAs substrates by molecular beam epitaxy. The material was characterized by x-ray diffraction, 4 K photoluminescence, and capacitance-voltage measurement techniques. At 300 K, background acceptor concentrations of 1.8×1015 and 1.4×1016 cm−3 were determined for the unintentionally doped AlAsSb and AlGaAsSb epitaxial layers, respectively. Compensating the AlAsSb and AlGaAsSb epitaxial layers with sulfur doping resulted in high-resistivity material with an effective donor concentration of about 1014 and 1015 cm−3, respectively.
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  • 10
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Simultaneous measurement of both the conduction- and valence-band dispersion curves in single strained-layer structures is presented. These measurements rely on the application of recent observations regarding breaking of the usual selection rules for interband magnetoluminescence transitions in modulation-doped structures. Low-temperature magneto-luminescence data for three representative InGaAs/GaAs n-type single-strained quantum well structures are presented. For energies approaching 50 meV above the band gap, we find that the conduction band is parabolic with an effective mass of 0.071m0. Over the same energy range, the valence bands are highly nonparabolic.
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