Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
52 (1988), S. 654-656
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The mobility of electrons in p-type GaAs, μPn has been determined by measuring the common emitter cutoff frequency fT of heterojunction bipolar transistors with a wide, uniformly doped base. At 295 K, μPn =1150 cm2/(V s) is found for a hole concentration of 3.6×1018 cm−3. At 77 K, μPn =6000 cm2/(V s). The room-temperature value is considerably smaller and the 77 K value considerably larger than the electron mobility in comparably doped n-type material.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.99395
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