ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    A New General Structural Category of Heteropolyelectrolytes. Unusual Magnetic and Thermal Contraction Phenomena1 (1966)
    s.l. : American Chemical Society
    Journal of the American Chemical Society 88 (1966), S. 2329-2331 
    Details
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ja00962a052
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Analysis of Tn3 sequences required for transposition and immunity
    Amsterdam : Elsevier
    Gene 41 (1986), S. 23-31 
    Details
    ISSN: 0378-1119
    Keywords: Recombinant DNA ; inverted terminal repeat ; minitransposon
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0378-1119(86)90263-5
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Long-range [111] ordering in GaAs1−xPx (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1890-1892 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The observation of ordering in GaAsP alloys is reported. The CuPt structure with ordering along the 〈111〉 directions on the anion sublattice was observed by transmission electron diffraction patterns in GaAs1−xPx alloys at compositions of x=0.3 and 0.4. Only two of the four CuPt variants were observed. The degree of ordering along the 1/2[1¯11] direction is higher than for the other variant, ordered along the 1/2[11¯1] direction. In addition, the degree of ordering decreases when x is reduced from 0.4 to 0.3.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101232
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Organometallic vapor phase epitaxial growth of a new semiconductor alloy: GaP1−xSbx (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 549-551 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The III/V semiconductor alloy GaP1−xSbx has been grown for the first time. This alloy, which has a large miscibility gap at the growth temperatures of 530–600 °C, has been grown by organometallic vapor phase epitaxy at atmospheric pressure. In spite of the miscibility gap, which is calculated to extend from x=0.01 to 0.99 at 530 °C, layers with excellent surface morphologies could be grown throughout the entire composition range. The 10 K energy band gap has been determined as a function of composition by using photoluminescence, x-ray diffraction, and electron microprobe analysis, yielding bowing parameters of 3.8 and 2.7 eV for the Γ and X conduction band minima, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99413
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Structural characterization of very thin GaInAs/InP quantum wells grown by atmospheric pressure organometallic vapor-phase epitaxy (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 563-566 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaInAs/InP quantum wells have been grown on (001) InP substrates by atmospheric pressure organometallic vapor-phase epitaxy with well widths ranging from a few monolayers to 100 A(ring). The interface quality and the epilayer thickness were examined using x-ray diffraction spectroscopy and transmission electron microscopy. The layers were found to be very uniform with both interfaces apparently free of defects. In addition, for a nominal 8 A(ring) quantum well, a (110) high-resolution cross-sectional lattice image clearly shows the well thickness to be 2–3 monolayers, confirming that the growth rate obtained from thick layers is accurate for very short growth times. These results demonstrate that atmospheric pressure organometallic vapor-phase epitaxy can produce extremely thin GaInAs/InP quantum wells of a few monolayers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345193
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Systematic studies on the effect of growth interruptions for GaInAs/InP quantum wells grown by atmospheric pressure organometallic vapor-phase epitaxy (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 5376-5383 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaInAs/InP quantum wells were grown by using atmospheric pressure organometallic vapor-phase epitaxy with and without interruptions at the interfaces. The growth schedule has a major effect on the optical properties of the quantum wells. For approximately 10-A(ring)-thick wells, the ground-state energy as determined by 10-K photoluminescence decreases in the following order: continuous growth, an interruption at the second interface, and interruptions at both interfaces. It is demonstrated that As is effective in substituting for P atoms on the InP surface during AsH3 purge. Varying the AsH3 flow rate during growth of the GaInAs well layer significantly influences the emission energies for samples grown continuously or with an interruption at the second interface. However, the emission energies of quantum wells grown with interruptions at both interfaces are found to be independent of the AsH3 flow rate, indicating insignificant substitution of As for P in the InP barriers. An interfacial layer of InAsxP1−x may play a dominant role in determining the emission energies for quantum wells thinner than 50 A(ring).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343681
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Raman scattering in GaP1−xSbx (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 5444-5446 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The lattice-dynamic properties of GaP1−xSbx have been investigated for the first time by using Raman scattering measurements. This alloy, which has a large miscibility gap, has been grown by organometallic vapor phase epitaxy. The first-order Raman spectra for the ternary samples show two mode behavior over the whole composition range. The composition dependence of the intensity and energy shift of each mode is reported. The broadening and asymmetry of the GaP longitudinal-optical modes are analyzed in terms of alloy disorder effects.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340365
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Long-range order in InAsSb (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1154-1156 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: For the first time, {111} ordering (CuPt type) has been observed in InAs1−xSbx alloys in a wide compositional range from x=0.22 to 0.88. The order-induced spots show the highest intensity for x≈0.5 samples and the lowest intensity toward each binary end compound. Only two of the four variants are formed during growth. In some areas the degree of order for these two variants is equal, and in other areas one variant dominates.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100746
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Characterization of model automotive exhaust catalysts: Pd on Zr‐rich ceria–zirconia supports (2000)
    Springer
    Catalysis letters 67 (2000), S. 99-105 
    Details
    ISSN: 1572-879X
    Keywords: palladium ; ceria–zirconia ; oxygen storage ; automotive exhaust catalyst
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Abstract Model Pd automotive three‐way catalysts were prepared with high‐surface‐area Zr‐rich ceria–zirconia powders as support materials, aged for 12 h at 1050°C under redox conditions simulating automotive exhaust gases, and characterized by a combination of techniques including oxygen storage capacity (OSC) measurements. Differences in OSC amongst aged catalysts made with materials of similar ceria–zirconia compositions, but produced by different processes, were weakly correlated with differences in support surface area. Evidence of encapsulation of Pd particles was found in most of the aged catalysts. The promotional effect of zirconia on ceria reducibility, well known from previous temperature‐programmed H2 reduction studies, was apparent in Ce 3d core‐level spectra from X‐ray photoelectron spectroscopy measurements, which showed that both X‐ray‐induced and H2 reduction become increasingly facile with increasing zirconia content. A slight Ce enrichment at the surface of the fresh catalysts made with the more Zr‐rich powders was found to increase upon aging.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1019086026110
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Effect of SO2 on the oxygen storage capacity of ceria-based catalysts (2000)
    Springer
    Catalysis letters 70 (2000), S. 131-135 
    Details
    ISSN: 1572-879X
    Keywords: ceria ; SO2 ; oxygen storage capacity ; CO oxidation ; water–gas-shift reaction
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Abstract We have examined the effect of SO2 poisoning on a series of catalysts having Pd supported on ceria, alumina, and ceria–zirconia. For pre-exposure of 20 ppm SO2 at 673 K, we observed no changes in the light-off curves for CO oxidation on Pd/alumina. This pre-exposure of SO2 to Pd/ceria resulted in a significant upward shift in the light-off curve, so that the poisoned Pd/ceria catalyst exhibited similar rates to that of Pd/alumina. Similar upward shifts were observed for the water–gas-shift reaction upon exposure of Pd/ceria or Pd/ceria–zirconia samples to SO2. However, pulse-reactor data with alternating CO and O2 pulses showed that SO2 poisoning actually increased the amount of oxygen that could be transferred to and from the catalyst over the entire temperature range that was examined. The implication of these results for understanding the effect of SO2 poisoning and the measurement of OSC are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1018885201072
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...