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  • 1
    Electronic Resource
    Electronic Resource
    Weinheim : Wiley-Blackwell
    Zeitschrift für anorganische Chemie 409 (1974), S. 106-114 
    ISSN: 0044-2313
    Keywords: Chemistry ; Inorganic Chemistry
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology
    Description / Table of Contents: Katalytische Oxydation von Wasserstoff an NickeloxidenDie katalytische Oxydation von Wasserstoff an hochdispersen sowie gesinterten Nickeloxiden wurde mit einer statischen Methode untersucht und das Vorhandensein zweier verschiedener kinetischer Bereiche festgestellt. Zwischen 0 und 100°C war die anfängliche katalytische Aktivität nicht stationär, und eine stark vergiftende Wirkung des Reaktionsproduktes wurde bei allen Temperaturen bis zu 250°C beobachtet. Die Aktivierungsenergie der Reaktion, die auf den anfänglichen Reaktionsgeschwindigkeiten auf frisch entgasten Oxidoberflächen basiert, wies den kleinen Wert von 1-2 kcal . mol-1 bei beiden Präparaten auf. Im Temperaturbereich zwischen 250 und 350°C wurde eine stationär katalytische Aktivität beobachtet, und die Aktivierungsenergie der Reaktion lag bedeutend höher bei 12-15 kcal . mol-1.Der Wechsel in der Aktivierungsenergie wird mit der Wirkung von unterschiedlichen Sauerstoffarten der Katalysatoroberfläche, die in beiden Temperaturbereichen verschiedene Aktivitäten bei der Reaktion aufweisen, diskutiert. Eine Analogie zwischen der Kohlen- oxid- nnd Wasserstoffoxydation an Nickeloxid wird festgestellt sowie ein Kompensationseffekt für eine Reihe von Oxydationsreaktionen gezeigt.
    Notes: The catalytic oxidation of hydrogen on highly-dispersed and sintered nickel oxides has been studied by a static method and the existence of two different kinetic rcgions established. Between 0 and 100°C the initial catalytic activity was not ionary and a strong poisoning effect of the reaction product was observed at all temperatnres up to 250°C. The activation energy of the reaction based on the initial reaction rates on freshly- outgassed oxide surfaces had a low value of 1-2 kcal. mole-1 with both preparations. Between 250 and 350°C stationary catalytic activity was observed and the activation energy of the reaction was significantly higher, 12-14 kcal . mole-1.The change of the activation energy is discussed in terms of the participation in the reaction of oxygen species in the catalyst surface layer which have different reactivities in the two temperature regions. A close analogy is noted between the carbon monoxide and hydrogen oxidation reactions on nickel oxide and a compensation effect is illustrated for a series of oxidation reactions on the oxide.
    Additional Material: 6 Ill.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 2996-2998 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thermally stimulated currents (TSC) were studied in polycrystalline diamond films to gain information about the trap levels in this material. The TSC glow curve is composed of a dominant peak at 555 K with smaller overlapping peaks in the 400–500 K range. The analysis of the TSC isothermal decay at high temperatures shows that the peak at 555 K is related to a trap level at 1.86 eV. The dose response and the room temperature fading rate of TSC were measured in order to evaluate the potential of these films for UV radiation dosimetry. The TSC are found to increase sublinearly with the dose over three decades and to decay with the logarithm of the storage time at room temperature. © 1997 American Institute of Physics.
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1238-1240 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report that the dark electrical properties of polycrystalline chemical vapor deposition diamond films are modified after exposure to UV light. UV illumination gives rise to an increase in the dark conductivity and to a change in the I–V characteristic from Iα exp (aV) for the as-grown material to IαV2 following UV irradiation. Thermally stimulated currents corresponding to an activation energy of about 1.9 eV are observed after UV illumination. The effects of UV irradiation can be totally reversed by thermal annealing and partially reversed by exposing the samples to white light. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1809-1811 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: CoSi2 epitaxial layers with different thicknesses have been grown onto porous-Si substrates by molecular beam epitaxy. Good crystallinity is obtained for CoSi2 films thicker than 50 nm. The use of a thin buffer layer is found to be crucial in order to achieve abrupt interface and good crystallinity. Planar view transmission electron microscope images obtained from 30-nm-thick CoSi2 buffer-Si/porous-Si samples indicate that a large area of the epitaxial film is dislocation free, in contrast with a uniform distribution of misfit dislocations across relaxed CoSi2/single-crystal Si samples of the same thickness. This study suggests a possible pseudomorphic growth by using porous Si as a substrate.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 5006-5013 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Radiation damage induced by 2 MeV alpha particles in polycrystalline diamond films has been studied as a function of the irradiation dose D (1012≤D≤1017 cm−2). The films were characterized using Raman/photoluminescence spectroscopy and I(V,T) measurements. The results can be summarized as follows. In undoped samples the H3 luminescent center (N–V–N) is observed for D≥1014 cm−2. The Raman diamond peak is broadened and shifted to lower frequencies for D(approximately-greater-than)1015 cm−2. No new graphitic component is detected after irradiation. On the contrary graphitic sp2 defects are annealed by irradiation. For D=3×1016 cm−2 new Raman defect peaks are detected at 1496 and 1635 cm−1. I(V,T) characteristics remain unaffected for D≤1016 cm−2. An increase in the conductivity is observed for D=3×1016 cm−2. At this dose we observe an activation energy of 0.4 eV and thermally stimulated currents related to defect levels at about 0.3 eV. A boron-doped sample (100 Ω cm) has been irradiated at 1017 cm−2 for comparison. After irradiation the conductivity of this sample is reduced and the activation energy of the conductivity is also reduced. Less damage is detected by Raman spectroscopy in the B-doped material. © 1996 American Institute of Physics.
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 1962-1964 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The use of MeV α particles to generate ion beam induced charge images with a signal to noise level approximately ten times larger than previously obtained using protons is described. The effect of α particle induced damage on the resultant image contrast is shown and a method of image formation in which the effects of ion induced damage are compensated for is described which enables the use of a higher ion dose.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2062-2064 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Diamond deeply implanted with 4 MeV P ions to a dose of 1×1015/cm2 is annealed by a focused pulsed laser that is selectively absorbed by the implanted damaged layer. Laser treatment with multiple pulses at ever increasing power leads to excellent regrowth as measured by channeling Rutherford backscattering spectroscopy, surface profilometry, and by optical transmission. The importance of the deep implantation and the potential of this method for doping diamond is demonstrated.
    Type of Medium: Electronic Resource
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  • 8
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Increasing the effective Schottky-barrier height of epitaxial CoSi2/Si(111) diodes by the use of thin, highly doped Si layers in close proximity to the metal-semiconductor interface has been studied. Intrinsic Si, Si doped by coevaporation of Ga, and epitaxial CoSi2 layers have all been grown in the same molecular-beam epitaxy system. Current-voltage and photoresponse characterization yield barrier heights ranging from 0.61 eV for a sample with no p+ layer to 0.89 eV for a sample with a 20-nm-thick p+ layer. These results are compared to theoretical values based on a one-dimensional solution of Poisson's equation under the depletion approximation.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Free Radical Biology and Medicine 7 (1989), S. 87-108 
    ISSN: 0891-5849
    Keywords: Free radical ; Hydrogen peroxide ; Hydroxyl radical ; Hyperoxia ; Iron-Oxygen species ; Lipid peroxidation ; Singlet oxygen ; Singlet peroxide ; Superoxide
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Chemistry and Pharmacology , Medicine
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    New York, NY [u.a.] : Wiley-Blackwell
    Journal of Applied Polymer Science 22 (1978), S. 2499-2507 
    ISSN: 0021-8995
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: A direct method for preparing deuterated ethylene by reducing acetylene-d2 with chromous ions in a dimethylformamide/deuterium oxide mixture is described. This method gives a good yield of precursor gas of relatively high purity. The gas was polymerized with a Ziegler-type catalyst to produce deuterated polyethylene with sufficient purity and melt flow properties for use in laser fusion studies. A reaction variables study showed that polymerization of deuterated ethylene yields polymers with higher molecular weights than those obtained using normal ethylene. The study also indicated that the deuterium content of the polymer decreases with increasing reaction temperature, thus dictating that the process operates near room temperature. Several mechanical and chemical properties of the deuterated polymer were determined and are reported.
    Additional Material: 7 Ill.
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