ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Carbon antisite-vacancy pair (CSiVC) is a fundamental defect in SiC, and is theoreticallypredicted to be very stable in p-type materials. However, this pair was found only in the form of anegatively charged state (i.e., the SI5 center = CSiVC−) in n-type and semi-insulating 4H-SiC, and yet,its presence has not been shown in p-type SiC. In this report, we present the first EPR observation onpositively charged CSiVC pairs in p-type 4H-SiC. By carefully examining p-type samples after electronirradiation, we found a pair of new defects with C3v and C1h symmetries. They correspond to “c-axial”pairs (C3v) and “basal” pairs (C1h) of CSiVC+, respectively. The positively charged pairs arecharacterized by a strong 13C hyperfine interaction due to a dangling bond on a carbon antisite (CSi),which is successfully resolved for the c-axial pairs
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/17/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.556-557.453.pdf
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