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  • 1
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Energy Economics 5 (1983), S. 164-170 
    ISSN: 0140-9883
    Keywords: Efficiency prices ; Monopoly ; Oil
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Energy, Environment Protection, Nuclear Power Engineering , Economics
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 6441-6446 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magnetic force microscopy (MFM) in the presence of an external magnetic field has been developed. This has led to further understanding of image formation in MFM as well as new insights concerning the interaction of magnetic recording media with an external field. Our results confirm that, at low applied fields, image formation results from the interaction of the component by the local surface field along the direction of the probe's magnetization. By reorienting the probe's magnetization by an appropriate application of an external field, it is possible to selectively image specific components of the local field. At higher applied fields, the probe becomes saturated and the changes in the images may be attributed to magnetization reversal of the sample. We have observed the transformations that occur at various stages of the dc erasure of thin-film recording media. This technique has also been applied to conventional magneto-optical media to study domain collapse caused by increasing temperature with an external bias field. The methods, results, and their analysis are presented. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 5478-5480 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In previous papers, we have suggested to use the Preisach model driven by stochastic inputs as a model for aftereffect. However, in these papers the stochastic inputs have been modeled by discrete time I.I.D. (independent identically distributed) random processes. Here, we further extend the aforementioned approach by modeling the stochastic inputs by continuous time diffusion processes. It is shown that the mathematical machinery of the "exit problem'' is instrumental for calculations of time evolutions of the expected value of the output of the Preisach model.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 2611-2616 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present an efficient method to compute the maximum transient drain current overshoot in silicon-on-insulator metal-oxide-silicon field effect transistors. The method is based on the physical idea that the number of majority carriers remains unchanged immediately after a change in the applied gate bias. The maximum overshoot is computed by solving the Poisson and the stationary minority carrier transport equations under the constraint that the number of majority carriers is conserved. Hence, the novel aspect of the method is that it allows one to compute the maximum drain current overshoot without resorting to a computationally costly transient simulation. The accuracy of the method is verified by comparing the value of the drain current computed by this method with the maximum value of the drain current computed by transient simulations. The comparisons show that, with this method, the maximum transient drain current overshoot can be computed quite accurately for fast changes in the gate bias.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 2128-2134 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The viscosity phenomenon in hysteretic systems has been traditionally studied by using thermal activation-type models. In this paper, a new approach to viscosity modeling is explored. This approach is based upon the use of the Preisach hysteresis models driven by stochastic inputs. First, the scalar case is discussed, and the obtained results are compared with thermal activation-type models and with some known experimental facts. The paper is concluded by the discussion of the vector models for viscosity.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 1324-1334 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An iterative method for solving the discretized steady-state semiconductor device equations is presented. This method uses Gummel's block iteration technique to decouple the nonlinear Poisson and electron-hole current continuity equations. However, the main feature of this method is that it takes advantage of the diagonal nonlinearity of the discretized equations, and solves each equation iteratively by using the nonlinear Jacobi method. Using the fact that the diagonal nonlinearities are monotonically increasing functions, it is shown that this method has two important advantages. First, it has global convergence, i.e., convergence is guaranteed for any initial guess. Second, the solution of simultaneous algebraic equations is avoided by updating the value of the electrostatic and quasi-Fermi potentials at each mesh point by means of explicit formulae. This allows the implementation of this method on computers with small random access memories, such as personal computers, and also makes it very attractive to use on parallel processor machines. Furthermore, for serial computations, this method is generalized to the faster nonlinear successive overrelaxation method which has global convergence as well. The iterative solution of the nonlinear Poisson equation is formulated with energy- and position-dependent interface traps. It is shown that the iterative method is globally convergent for arbitrary distributions of interface traps. This is an important step in analyzing hot-electron effects in metal-oxide-silicon field-effect transistors (MOSFETs). Various numerical results on two- and three-dimensional MOSFET geometries are presented as well.
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 468-475 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A method is developed to analyze the transient response of semiconductor devices in phase space. This is achieved by solving the space and time dependent electron Boltzmann transport equation self-consistently with the Poisson and transient hole-current-continuity equation. The result gives the details of the time evolution of the distribution function. The method is applied to analyze a bipolar junction transistor. The model predicts the limits in which the steady-state response approximation can be applied. The model exposes a transient overshoot in the high energy tail of the distribution function.© 1999 American Institute of Physics.
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 4388-4390 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is demonstrated that, under some natural conditions, nonlinear diffusion of electromagnetic fields in a magnetically nonlinear conducting cylinder of arbitrary cross-section admits "step response characterization." This means that if the flux through the cylinder is measured (or computed) for a step change in the magnetic field at the boundary, then these measured (or computed) data allows one to predict the flux for monotonically increasing (or decreasing) magnetic fields at the boundary. © 1999 American Institute of Physics.
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  • 9
    Electronic Resource
    Electronic Resource
    Springer
    Physics and chemistry of minerals 26 (1998), S. 31-43 
    ISSN: 1432-2021
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Notes: Abstract  The ambient pressure elastic properties of single-crystal TiO2 rutile are reported from room temperature (RT) to 1800 K, extending by more than 1200 ºK the maximum temperature for which rutile elasticity data are available. The magnitudes of the temperature derivatives decrease with increasing temperature for five of the six adiabatic elastic moduli (C ij ). At RT, we find (units, GPa): C 11=268(1); C 33=484(2); C 44=123.8(2); C 66=190.2(5); C 23=147(1); and C 12=175(1). The temperature derivatives (units, GPa K−1) at RT are: (∂C 11/∂T) P =−0.042(5); (∂C 33/∂T) P =−0.087(6); (∂C 44/∂T) P =−0.0187(2); (∂C 66/∂T) P =−0.067(2); (∂C 23/∂T) P =−0.025; and (∂C 12/∂T) P −0.048(5). The values for K S (adiabatic bulk modulus) and μ (isotropic shear modulus) and their temperature derivatives are K S =212(1) GPa; μ=113(1) GPa; (∂K S /∂T) P =−0.040(4) GPa K−1; and (∂μ/∂T) P =−0.018(1) GPa K−1. We calculate several dimensionless parameters over a large temperature range using our new data. The unusually high values for the Anderson-Gròneisen parameters at room temperature decrease with increasing temperature. At high T, however, these parameters are still well above those for most other oxides. We also find that for TiO2, anharmonicity, as evidenced by a non-zero value of [∂ln (K T )/∂lnV] T , is insignificant at high T, implying that for the TiO2 analogue of stishovite, thermal pressure is independent of volume (or pressure). Systematic relations indicate that ∂2 K S /∂T∂P is as high as 7×10−4 K−1 for rutile, whereas ∂2μ/∂T∂P is an order of magnitude less.
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  • 10
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