ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    A design of CuInS2 single-crystal growth by the travelling-heater method (1983)
    Springer
    Il nuovo cimento della Società Italiana di Fisica 2 (1983), S. 1762-1766 
    Details
    ISSN: 0392-6737
    Keywords: Methods of crystal growth and purification
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Description / Table of Contents: Riassunto Si è fatta un'analisi teorica per studiare la cinetica coinvolta nella crescita del cristallo di CuInS2 col metodo del riscaldatore mobile. Si sviluppa uno schema numerico per calcolare il gradiente di temperatura in ogni punto del sistema. Si è ottenuta una stima numerica del valore di massimo accrescimento come suggerimento per stabilire la velocità di spostamento del riscaldatore nell'esperimento pratico.
    Abstract: Резюме Проводится теоретический анализ кинетики выращивания кристалла CuInS2, используя метод перемещающегося нагревателя. Развивается схема вычисления градиента температуры в любой точке внутри системы. Получается численная оценка максимальной скорости роста для установления скорости перемещения нагревателя в практическом эксперименте.
    Notes: Summary A theoretical analysis has been carried out to investigate the kinetics involved in the CuInS2 crystal growth by the travelling-heater method. A numerical scheme is developed to compute the temperature gradient at any point inside the system. A numeric estimate of the maximum growth rate was obtained as a suggestion for setting the travelling speed of the heater in the practical experiment.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02457863
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    A theoretical analysis of epitaxial growth of CuInS2 by chemical vapour deposition (1983)
    Springer
    Il nuovo cimento della Società Italiana di Fisica 2 (1983), S. 1658-1663 
    Details
    ISSN: 0392-6737
    Keywords: Methods of crystal growth and purification
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Description / Table of Contents: Riassunto È stata condotta un'analisis teorica per studiare la cinetica implicata nella crescita CVD di CuInS2. Si assume un modello a strato stagnante per la simulazione numerica. Si ottengono risultati di calcolo per il tasso di crescita in funzione della temperatura del substrato, la velocità media del gas e le pressioni parziali nel tubo di reazione. Questa analisi indica che la temperatura del substrato gioca un ruolo dominante nel tasso di crescita, che è consistente con i dati sperimentali.
    Abstract: Резюме Теоретически исследуется кинетика роста кристаллов CuInS2 посредством химического осаждения пара. Для численного моделирования предполагается слоистая модель. Получены численные результаты для скорости роста в зависимости от температуры подложки, средней скорости газа и парциальний в реакторе. Проведенный анализ показывает, что температура подложки играет существенную роль в определении скорости роста, что согласуется с нашими экспериментальными результатами.
    Notes: Summary A theoretical analysis has been carried out to investigate the kinetics involved in the CVD growth of CuInS2. A stagnant-layer model is assumed for the numerical, simulation. Computational results for the growth rate as a function of the substrate temperature, mean, gas velocity and partial pressures in the reaction tube are obtained. This analysis indicates that the substrate temperature plays a dominant role in the growth rate, which is consistent with our experimental data.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02457847
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    The substrate heating effects on ion-beam sputter-deposited CuInS"2 and GaP thin films
    Amsterdam : Elsevier
    Applications of Surface Science 11-12 (1982), S. 544-552 
    Details
    ISSN: 0378-5963
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0378-5963(82)90099-X
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Sulfurization of SiO2 surface for polycrystalline silicon growth on SiO2/Si structure at 250 °C (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 1024-1026 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A study of sulfurizing SiO2 surfaces for the growth of Si/SiO2/Si structures was done in the present work. The silicon film was deposited at 250 °C by plasma enhanced chemical vapor deposition. All of the deposited Si films with or without sulfur treatment were of amorphous phases with a H2/(SiH4+H2) flow ratio less than 92%. For those films deposited at the H2/(SiH4+H2) flow ratio of 92%, a transition amorphous Si layer appeared between the SiO2 and polycrystalline silicon films in those samples without sulfur treatment. No transition amorphous Si layer was present in the sample deposited with sulfur treatment, and the largest grain size of polycrystalline silicon was estimated to be around 500 A(ring). The polycrystalline phase was obtained in all the silicon films deposited on SiO2/Si substrate with a H2/(SiH4+H2) flow ratio larger than 92%. This technique would be applicable towards thin film transistor fabrication.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110958
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Microstructures of low-temperature-deposited polycrystalline silicon with micrometer grains (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 6542-6548 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The microstructures of low-temperature polycrystalline silicon grown both on SiO2 and Corning 7059 glass substrate are presented. The silicon was deposited by the hydrogen dilution method using electron-cyclotron-resonance chemical-vapor deposition at 250 °C without any thermal annealing. The hydrogen dilution ratios were varied from 90% to 99%. Transmission electron microscopy images, Raman shift spectra, and x-ray-diffraction (XRD) patterns of the films were obtained. The maximum grain size was about 1 μm and the crystalline fraction which was characterized from Raman shift spectra was near 100%. From the XRD patterns 〈111〉- and 〈110〉-oriented crystalline silicon grains were clearly present in the polycrystalline silicon films. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359063
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Fundamental electrical properties of fluorinated and N2O plasma-annealed ultrathin silicon oxides grown by microwave plasma afterglow oxidation at low temperatures (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 5508-5514 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A technique for growing ultrathin silicon oxides of superior quality at low temperatures is indispensable for future submicron device applications. Fundamental characteristics such as the oxide breakdown fields, oxide charges, and interface-state densities of various ultrathin silicon oxides (≤8 nm) grown by microwave plasma afterglow oxidation at low temperatures (400 and 600 °C) were investigated. Fluorination (HF soaking) and low-temperature N2O plasma annealing were employed to improve the properties of the oxides. The breakdown fields of the as-grown silicon oxides were enhanced and the interface-state densities were reduced. The effect of N2O annealing time on the interface-state density was also investigated. A longer annealing time ((approximately-greater-than)1 h) was required to reduce the interface-state density. The effective oxide charge density of 600 °C as-grown oxide was as low as 6×1010 cm−2. Additionally, the breakdown field of the thin silicon oxide grown at 600 °C with 15 min N2O plasma annealing was 12 MV/cm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357170
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Investigation on the phosphorous interstitials in phosphorus-implanted copper indium disulfide by a simplified total energy calculation (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 1651-1653 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This paper presents a simplified total energy calculation for the phosphorus interstitials in P+ -implanted CuInS2. The calculation was based on the tight-binding approximation and the atomic structure calculation scheme. Two types of interstitials were considered. One involved P and S2−, the other involved P3+ and S3−. Results showed that the latter would be more possible than the former, which confirms the results of our previous electron paramagnetic resonance study on the p-type doping of P+ -implanted CuInS2 .
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344379
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Electron paramagnetic resonance study on the p-type doping of copper indium disulfide by phosphorus implantation (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 5798-5800 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High doping efficiencies have been observed in phosphorus-implanted CuInS2 single crystals by pulsed electron-beam annealing, which could not be achieved by the conventional furnace annealing method. This paper presents the investigations by using the electron paramagnetic resonance measurement on this p-type doping effect. The electron paramagnetic resonance signal from the phosphorus interstitials was observed in the as-implanted crystals. The same signal appeared in the subsequently thermally annealed samples but disappeared in the pulsed electron beam annealed ones. This shows the superiority of melting crystal surfaces in the pulsed electron-beam annealing on eliminating the implantation-induced defects to obtain high doping efficiencies.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343649
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Photoreflectance of sulfur-annealed copper indium disulfide (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 283-287 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temperature dependence of the energy gaps for sulfur-annealed copper indium disulfide has been studied by photoreflectance in the temperature range of 10–300 K. The sulfur-annealed sample has been found to have larger transition energies, smaller positive temperature coefficients of energy gaps, and larger spin-orbit splitting energy than the as-grown sample. This can be explained by the reduction of d-level contributions in the upper valence band probably caused by the variation of lattice distance due to native defects.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347128
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Electron paramagnetic resonance study on annealing of phosphorus-implanted cadmium telluride (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 4212-4214 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This paper presents the investigations on the p-type conduction of the phosphorus-implanted CdTe single crystals. Previous theoretical calculations predicted the existence of large amounts of phosphorus interstitials in the as-implanted and thermally annealed samples and the elimination of these defects in the pulse electron-beam-annealed samples, which is confirmed in this work by the electron paramagnetic resonance measurements. This shows the significant effect of melting crystals in the pulse electron-beam annealing process on obtaining high carrier concentrations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343302
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...