ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
We study electronic Raman scattering of phosphorus and nitrogen doped siliconcarbide (SiC) as a function of temperature in the range 7K 〈 T 〈 300K. We observe aseries of peaks in the Raman spectra which we assign to electronic transitions at nitrogenand phosphorus donors on different lattice sites. These transitions are identified as valley orbittransitions of the 1s donor ground state. From the polarization dependence of the observedpeaks, we find that all electronic Raman signals have E2-symmetry of C6v for the hexagonalpolytypes (6H-SiC and 4H-SiC) and E-symmetry of C3v for 15R-SiC. We find a reduction ofthe intensities of all valley-orbit Raman signals with increasing temperature and ascribe thisreduction to the decreasing occupation of donor states
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.579.pdf
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