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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 6204-6208 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Changes in the impedance, ≈600%/Oe, at axial fields less than 1 Oe have been observed in the presence of a 90 kHz, few mA current through a soft, nearly zero magnetostrictive wire. In this 125 μm diameter CoFeSiB amorphous wire we observe a total change of 160% at the maxima of the impedance in dc fields less than 2 Oe. A systematic study of the role of induced anisotropy in the axial, circumferential, and helical directions on the magneto-impedance shows that the largest effect is seen in the wire annealed to obtain circumferential easy axis using a 15 mA ac current passing through it. Both the axial hysteresis loops and the observed I-V characteristics reflect the induced anisotropies. The observed dependence of the inductance change on the type of the anisotropy induced in these wires can be modeled in terms of an interplay between the induced anisotropy, reversing ac field, and the axial dc field.
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  • 2
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dynamics of three-dimensional nonperiodic structures in magnetic garnet have been investigated using large scale numerical simulations. The width of a single π-vertical Bloch line (πVBL) at equilibrium has been measured to be twice the analytical Bloch line width π(A/2πM2s)1/2, where A is the exchange energy constant and MS the spontaneous magnetization. A 2πVBL has been shown to be 1.5× wider than a πVBL. A comoving technique is used to track a single domain wall with a single πVBL when a 5 Oe field is applied perpendicularly to the surface of the film. At dynamic equilibrium, the VBL to wall velocity ratio is equal to ten, smaller than the value found for a simulated loosely spaced chain of πVBLs. A 2πVBL is split into two single πVBLs when an in-plane field is applied in the same direction as that of the center spin of the 2πVBL. No motion of the surface spins is observed for the first 10 ns when a 30 Oe field is applied although considerable spin distortion occurs in the wall center. When the field is turned off after 8 ns, the relaxing distortion drives the surface spins apart. The containment due to 2π horizontal Bloch line formation during the process is demonstrated. © 1996 American Institute of Physics.
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 6958-6958 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Co-Si-B amorphous wires having the negative magnetostriction comprises shell and core domains and exhibits the re-entrant flux reversal as the Fe-Si-B wire with positive magnetostriction. One of the characteristic features of Co based wires is that a sharp pulse voltage generation between two wire ends (Matteucci effect) is accompanied with re-entrant flux reversal, which is useful for sensor application because of no need for sense windings. In this work, we studied the origin of the large Matteucci effect of Co-Si-B wires by domain observation with a Kerr microscope and by Sixtus–Tonks experiments by driving the reverse domain propagation with the circular fields generated by the current through wires. We also tried to measure the hysteresis loop in the circular direction by integrating the Matteucci voltage. It was found that the domain patterns of the Co-Si-B wire surface is not the previously reported bamboo configuration but the helical configuration. Most of the anisotropy of the amorphous materials is magnetostrictive in origin. The helical anisotropy of Co based wire seems consistent, if we assume the same residual stress distribution as in the steel rod quenched into the water. Because of the helical anisotropy, the Co wire has the big circular component of magnetization in the core domain as well as in the shell domain, and both domain can interact near the interface region. It was found that reverse domain propagation along the wire axis can be caused by application of the circular field and that the shell domain moves discontinuously during the re-entrant flux reversal in the core domain. These circular magnetization components in both core and shell domains due to helical anisotropy and their interaction seems responsible for the large Matteucci effect in the Co-Si-B wires.
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 5757-5759 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dynamics of magnetic domain-wall motion in two dimensions for materials of interest to vertical Bloch-line memory devices has been simulated on the Connection Machine. By use of a Fourier transform technique to evaluate the demagnetizing fields and explicit time integration of the Landau-Lifshitz-Gilbert equation, the equilibrium configuration of a domain wall and the dynamic structure of a wall in the presence of an external field has been studied. Horizontal Bloch-line (HBL) nucleation, propagation and "punch through'' can be observed in moving walls. The domain-wall configuration for stripe chopping has been investigated and HBL motion is seen to be a dominant feature in this process.
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 5472-5474 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The small-angle magnetization rotation method has been shown to be applicable for measuring the saturation magnetostriction of amorphous wires by using the circumferential field generated by an ac current through the wire. The method was used to measure compositional variation of magnetostriction of Fe-Co based amorphous wires. A saturation magnetostriction λs of 32.9×10−6 and −2.6×10−6 was found for Fe and Co based wires, respectively. The compositional variation of the saturation magnetostriction, λs, for (Fe1−xCox)75Si10B15 amorphous wires (X=0–0.8) decreases with increasing cobalt content and crosses zero around X=0.95 as in amorphous ribbons. The maximum experimental error of measurement was estimated to be about 5%.
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 5821-5823 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We are using the connection machine to perform three-dimensional micromagnetic simulations of films with interesting topological structures such as vertical Bloch lines. A critical element of the computations is the calculation of the demagnetizing field. We have extended the Fourier method of Mansuripur and Giles to three-dimensional films and implemented it on the connection machine. We discuss the algorithm and its parallel implementation.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 6193-6195 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Direct integration of the Landau–Lifshitz–Gilbert equation in a three-dimensional rectangular lattice shows that fabrication asymmetry of tapered ends affects the magnetic switching behavior of the magnetic layers of a pseudospin valve (PSV) memory cell in word disturb condition. When a 10 nm asymmetry is introduced with the longer sides of the tapers on the same side of the PSV memory cell, a "360°" wall in the storage layer is formed when a 40 Oe uniform word disturb field is applied opposite to the magnetization direction in the storage layer. The initial magnetization state is recovered when the field is turned off. When the longer sides of the tapers are on opposite sides of the cell, complete magnetization reversal occurs in the storage layer. The sense layer and the storage layer relax to an antiparallel configuration magnetization that is opposite to the initial configuration in the memory cell when the field is turned off. The information is lost. Successful operation of the memory depends upon a fabrication accuracy that is better than 10 nm. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 6259-6261 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Topological patterning of magnetic thin films has a substantial effect on domain behavior. Bubble domains located underneath a groove in patterned material display an ovoid profile with the major axis along the groove. The major axis was measured to have a diameter up to twice that along the minor axis. Measurements of the collapse field indicate that it can vary by up to 3% with changes in the groove depth, and by up to 5% with changes in the pitch of a groove array. © 2000 American Institute of Physics.
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 6199-6201 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dynamic behavior of an isolated stripe domain attracted to a single rectangular groove on the top surface of a 1.6-μm-thick bubble garnet film is analyzed using a numerical model based on the Landau–Lifshitz–Gilbert equation. The groove creates an effective field which interacts with the stripe domain, such that the azimuthal angle of magnetization in the wall no longer rotates uniformly through the film thickness. The wall shape becomes highly distorted near the groove, forming head-on walls at the groove corners, and cleaving when pushed beneath the groove.© 1999 American Institute of Physics.
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 3168-3170 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nonuniform transient motion of magnetic stripe domain walls was observed in bubble garnet material. A number of films with 2–8 μm stripe width were used for investigation. The nonuniformity of motion varies from place to place on a submicron scale in the "perfect'' single-crystal garnet film. Observing the development through a time sequence shows that the nonuniform motion begins within the first wall width of displacement. The degree of the nonuniformity increases as the effective drive field decreases. This nonuniform wall motion is due to the existence of local fluctuations of wall coercivity within the garnet crystal film. The response of the stripe domain wall due to dc bias field variation shows behavior similar to Barkhausen jumps indicating the intrinsic nonuniformity of the garnet material. The nonuniform wall motion may seriously affect the reliability of the propagation of vertical Bloch lines (VBLs) in a VBL memory.
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