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  • 1
    Electronic Resource
    Electronic Resource
    Mapping of transition-state wave functions: I. Rotational state distributions following the decay of long-lived resonances in the photodissociation of HONO(S1) (1991)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 94 (1991), S. 7929-7936 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We investigate final rotational state distributions following the decay of long-lived resonance states with k*=0, 1, and 2 quanta of internal bending excitation. The calculations are related to the photodissociation of HONO on the S1 electronic state surface, truncated to two degrees of freedom namely the HO–NO dissociation bond and the ONO bending angle. The decay of the k*=0 resonance yields a smooth Gaussian-type distribution, in very good agreement with recent measurements. The distributions following the decay of the excited bending states show a bimodal behavior with the main maxima at high rotational states. The final angular momentum distributions reflect the coordinate-dependence of the dissociation wave function in the region of the transition state, mediated by the dynamics in the exit channel when the wave packet slides down the steep potential slope. A qualitative interpretation of the rotational state distributions is provided by a simple classical model which applies the transition-state wave function as a weighting for trajectories starting on a line that separates the intermediate complex from the product channel.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.460127
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  • 2
    Electronic Resource
    Electronic Resource
    A nomenclature for Λ-doublet levels in rotating linear molecules (1988)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 89 (1988), S. 1749-1753 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: It is proposed that the two Λ-doublet levels of linear molecules with nonzero electronic orbital angular momentum be labeled Λ(A') and Λ(A‘), e.g., Π(A') and Π(A‘) for Π states, etc., according to the following prescription: All series of levels in which the electronic wave function at high J is symmetric with reflection of the spatial coordinates of the electrons in the plane of rotation will be designated Λ(A') for all values of J, and all those for which the electronic wave function is antisymmetric with respect to reflection will be denoted Λ(A‘). It is emphasized that this notation is meant to supplement, and not replace, the accepted spectroscopic e/f labeling and the parity quantum number. The utility of the Λ(A')/Λ(A‘) notation is that it is of most relevance in the mechanistic interpretation of reactive or photodissociative processes involving open-shell molecules.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.455121
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  • 3
    Electronic Resource
    Electronic Resource
    Growth of CuO films by pulsed laser deposition in conjunction with a pulsed oxidation source (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 2657-2661 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Copper (II) oxide films of high chemical and crystal purity have been grown on MgO(100) substrates using pulsed laser ablation (248 nm) of copper in conjunction with a pulsed oxidizing gas source (N2O). A novel experimental geometry is presented, in which the gas pulse and ablation plume cross close to their respective origins, where the particle and energy densities are highest. The properties of the films have been analyzed by x-ray diffraction and scanning electron microscopy. Growth rates are typically 0.025–0.035 A(ring)/laser pulse within the substrate temperature region of 50 to 600 °C. Results in the region of 350 °C are presented. Analysis by time-of-flight mass spectroscopy has identified the predominant gas-phase species during ablation and transportation to the growing surface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357562
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  • 4
    Electronic Resource
    Electronic Resource
    Extended Hueckel molecular orbital calculation on 4-methylumbelliferone and its tautomer (1973)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 77 (1973), S. 860-861 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100625a026
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  • 5
    Electronic Resource
    Electronic Resource
    Reactive crossed beam scattering of a Ti plasma and a N2 pulse in a novel laser ablation method (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 2082-2092 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The interaction and energy transfer of a laser ablation plasma of Ti with a pulsed N2 supersonic expansion are investigated using time-of-flight quadrupole mass spectroscopy and Langmuir probe techniques. The Ti ablation target and the exit nozzle of the pulsed gas source are positioned so that the plasma plume and gas pulse interact near to their respective origins, where the number density is still high, which hence results in strong coupling of the nascent plasma with the gas pulse. The timing between the gas pulse and ablation plume is shown to be critical in determining the scattering processes and the chemical nature of the films grown by this method, an example of which is presented. The degree of ionization of the plasma when crossed with the gas pulse compared to that for expansion into vacuum increases from less than 10−3 to 0.28±0.11, which is attributed to collision-induced ionization of Ti atoms. Further increasing the N2 number density quenches the ion signal. The effective bimolecular cross section for scattering of Ti with the high density N2 pulse is about 4 times larger than that with a static background of low pressure N2, while the fractional depletion of the N2 pulse by the Ti plume depends on the N2 number density in the pulse, indicating that at these high local pressures, collective effects prevail. We propose a simple model for the resulting evolution of the plasma based on electrostatic considerations. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366018
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  • 6
    Electronic Resource
    Electronic Resource
    Ablation and blow-off characteristics at 248 nm of Al, Sn and Ti targets used for thin film pulsed laser deposition (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 1794-1802 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Laser ablation characteristics in vacuum using excimer radiation at 248 nm and pulse durations of 17 ns for Al, Sn and Ti are presented. Ablation yields are measured as a function of input laser energy and target refreshment rate using gravimetric techniques. The laser ablation thresholds for Al, Sn, and Ti are found to be 3.15, 0.89, and 2.35 J⋅cm−2, respectively. Ablation is inefficient, the majority of the laser input energy being shielded from the surface by the phenomenon of laser supported absorption, which results in heating of the nascent plasma. As the plasma becomes superheated during impingement of the laser pulse, energy is partially re-emitted in the form of black-body radiation. Mean kinetic energies of the ablation plasma species are determined by time resolved mass spectroscopy to be of the order of 5–50 eV. Target roughness and thin film morphology have been investigated using atomic force microscopy and scanning electron microscopy. Target roughness increases due to exfoliation and explosive boiling as the material is successively irradiated at a given point. Beyond a certain roughness, laser droplets are formed which propagate with the ablation plasma onto the growing film. Guidelines are presented for the rate of refreshment of exposed target material required to minimize incorporation of macroscopic material in the growing film. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362990
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  • 7
    Electronic Resource
    Electronic Resource
    Parallel epitaxy of TiN(100) thin films on Si(100) produced by pulsed reactive crossed-beam laser ablation (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 1966-1968 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: TiN(001)[100]||Si(001)[100] parallel epitaxy of thin films grown by pulsed reactive crossed-beam laser ablation (KrF, 248 nm) is investigated in situ by reflection high-energy electron diffraction and ex situ by x-ray diffraction, full-hemispherical X-ray photoelectron diffraction and low-energy electron diffraction. TiN films are grown on atomically flat, initially two domain 2×1 reconstructed Si(001) surfaces at 100≤T≤800° C. Parallel epitaxy is found to prevail at T≥400 °C with growth rates in the 10−2 monolayer/pulse−1 range and a repetition rate of 2 Hz. The substrate and film morphologies are investigated using atomic force microscopy. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119757
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  • 8
    Electronic Resource
    Electronic Resource
    Eigenschaftne von aromatischen Thioketinen im angeregten Zustand: Thiofluorenon (1977)
    Springer
    Colloid & polymer science 255 (1977), S. 807-807 
    Details
    ISSN: 1435-1536
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01664455
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  • 9
    Electronic Resource
    Electronic Resource
    Eigenschaften des angeregten Zustandes von aromatischen Thioketonen: Thiofluorenon. 2. Mitt. (1978)
    Springer
    Colloid & polymer science 256 (1978), S. 174-175 
    Details
    ISSN: 1435-1536
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01679218
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  • 10
    Electronic Resource
    Electronic Resource
    Angeregte Emissionsspektren und Photochemie des 3820 A-Bandensystems von Propiolaldehyd in der Dampfphase. 2. Mitt (1978)
    Springer
    Colloid & polymer science 256 (1978), S. 826-826 
    Details
    ISSN: 1435-1536
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01438059
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