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  • 1
    Electronic Resource
    Electronic Resource
    Ti-N-C Films Deposited by Ion Beam Assisted MF Twin Targets Unbalanced Magnetron Sputtering (2007)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 546-549 (May 2007), p. 1729-1734 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Using Hall ion source assisted MF twin targets unbalanced magnetron sputtering, series ofTi/TiN, Ti/TiN/Ti(C,N) and Ti/TiN/Ti(C,N)/TiC hard anti-wear films are deposited on differentmaterials like stainless and high speed steels by changing atmosphere, bias mode, sputtering and ionbeam assisted currents. The color, crystal structure, hardness and binding force of film are tested andanalyzed, respectively. Experimental results show that color of film is sensitive to atmosphere, slightchange of atmosphere can influence the coating’s color seriously. The preferred orientation ofTi(C,N) films prepared by MF twin targets unbalanced magnetron sputtering has no obvious changecompared with the film deposited by other PVD technologies. The substrate material has greatinfluence on film’s hardness, binding energy and surface modification. The application of Hallcurrent can effectively improve the binding force between film and substrate
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/16/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.546-549.1729.pdf
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  • 2
    Electronic Resource
    Electronic Resource
    Thermally-induced one-step construction of the tetracyclic steroidal skeleton from acyclic enyne-allenes (1993)
    s.l. : American Chemical Society
    The @journal of organic chemistry 58 (1993), S. 1651-1652 
    Details
    ISSN: 1520-6904
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/jo00059a005
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  • 3
    Electronic Resource
    Electronic Resource
    Optical-absorption study of RuS2−xSex single crystals (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 2691-2696 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An optical-absorption study of synthetic RuS2−xSex single crystals is reported over a temperature range from 80 to 300 K. The data are fitted to several expressions for the shape of the absorption edge, with the best fit being to that expected for indirect allowed transitions. The band gaps at any temperature varies smoothly with the Se composition x, indicating that the nature of the band edges are similar for RuS2, RuSe2, and the compounds of intermediate compositions. The indirect band gaps of various temperatures are determined and their temperature dependence are analyzed by the Varshni equation [Physica 34, 149 (1967)] and an empirical expression proposed by O'Donnell and Chen [Appl. Phys. Lett. 58, 2924 (1991)]. The parameters that describe the temperature dependence of energy gap of RuS2−xSex are evaluated and discussed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360064
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  • 4
    Electronic Resource
    Electronic Resource
    Optical-absorption study of synthetic pyrite FeS2 single crystals (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 1710-1714 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical-absorption study of synthetic pyrite FeS2 single crystals prepared by the chemical-vapor-transport method is reported over a temperature range from 4.2 to 300 K. At lower temperatures several features which occur below the absorption edge are superposed on the absorption curve. The origin of the sharpest peak is identified as the transition between the top of valence band and Cr3+ trapping center through comparison of the results with that of the low-temperature photoconductivity and the photoelectron paramagnetic resonance measurements. The nature of other weaker features is discussed. The existence of these features prevents the determination of the band gap of FeS2 by fitting the optical-absorption data to the form of (αhν)∝(hν−E0)n. Therefore, the energy gap of FeS2 at low temperatures is estimated by adding the thermal ionization energy of the shallow acceptor states to the photoionization energy between the (SCl)2− states and the bottom of the conduction band. The band gap of various temperatures is determined and its temperature dependence is analyzed by an empirical expression proposed by O'Donnell and Chen [Appl. Phys. Lett. 58, 2924 (1991)]. The parameters that describe the temperature dependence of Eg of the material are evaluated and discussed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358863
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  • 5
    Electronic Resource
    Electronic Resource
    Photo-electron paramagnetic resonance investigation of the Cr3+ impurity and the (SCl)2− defect in synthetic FeS2 crystals (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 5282-5285 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The method of photo-electron paramagnetic resonance has been used to investigate the photosensitivities of the Cr3+, Ni2+, and (SCl)2− impurities and defects detected by electron paramagnetic resonance (EPR) in synthetic FeS2 crystals grown by the method of chemical vapor transport by using ICl3 as the transport agent. Cr3+ and (SCl)2− are photosensitive, but Ni2+ is not, to IR illumination with photon energy less than the band-gap energy. A decrease (photoquenching) in the EPR signal of Cr3+ and an increase (photoinduction) in the EPR signal of (SCl)2− were detected at low temperatures. At T(approximately-equal-to)110 K, the spectral response of the photoquenching of Cr3+ is the largest near λ=1425 nm−1 (0.87 eV), which can be correlated with the 0.90 eV photoconductivity peak and the 0.87 eV IR absorption peak observed at low temperatures in the same batches of crystals. After several cycles of on–off IR illumination, the equilibrium population of Cr3+ is less than that of the virgin state, indicating the presence of hole traps. The transient and equilibrium behaviors of the (SCl)2− defects are just the opposite, which indicates that a S2− defect behaves as a hole trap. A band model has been established to explain the observed photoquenching of Cr3+, the photoconductivity peak, and the IR absorption peak.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355728
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  • 6
    Electronic Resource
    Electronic Resource
    Photoconduction of synthetic pyrite FeS2 single crystals (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 2786-2789 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The photoconduction of synthetic pyrite FeS2 single crystals with low impurity concentration prepared by chemical vapor transport method is reported over a temperature range from 15 K to 300 K. The energy gap is determined from the photoconductive spectral response by the Moss rule. At room temperature the indirect energy gap is found to be 0.83±0.02 eV. According to the experimental evidence for a sharp antibonding p-like state above the Fermi level of FeS2 reported by Folkerts et al. [J. Phys. C 20, 4135 (1987)], the indirect gap is assigned as the transition between Fe 3d t2g and S 3p σ* states. The temperature variation of the indirect band gap shows a linear dependence between 100 K and 300 K with a negative temperature coefficience equal to 1.0±0.1 meV/K. A distinct feature at higher energy side of the spectrum is observed and attributed to the direct band-gap transition. At temperature lower than 60 K, a very sharp peak around 0.9 eV emerged below the absorption edge. This feature might be associated with the excess carriers induced by the photothermal ionization between the impurity levels and conduction band.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354627
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  • 7
    Electronic Resource
    Electronic Resource
    Electron paramagnetic resonance study of the solid solutions Ru(S1−xSex)2 (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 1796-1799 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The method of electron paramagnetic resonance (EPR) has been used to study the n-type semiconducting Ru(S1−xSex)2 single crystals grown by the method of chemical vapor transport. A chalcogen point defect model is established to account for the S=1/2 paramagnetic species detected by EPR. This model assumes that an X2−(X=S or Se)-X vacancy pair behaves like an electron donor. The g-factor anisotropy is dependent upon the degree of chalcogen deficiency which is interpreted as due to the formation of a narrow band by the magnetic electrons of the chalcogen defect below the bottom of the conduction band.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346612
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  • 8
    Electronic Resource
    Electronic Resource
    Electron-paramagnetic-resonance study of the Cr3+ and Ni2+ ions and the (SCl)2− defect in FeS2 (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 370-375 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An electron-paramagnetic-resonance study of the iron pyrite crystals grown by the method of chemical-vapor transport is reported. Cr3+ and Ni2+ ions were detected as substitutional impurities. An effective spin S =1/2 defect species that exhibits hyperfine couplings to the two natural isotopes of chlorine was detected in sulfur-deficient FeS2 grown by using ICl3 as a transport agent. This species can be identified as the defect species (SCl)2−. The similarity and differences exhibited by this defect species in the sulfur-deficient Fe pyrite and the chalcogen-deficient Ru pyrites are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350718
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  • 9
    Electronic Resource
    Electronic Resource
    Electron paramagnetic resonance of an intrinsic defect in RuS2 single crystals (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 4230-4233 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A paramagnetic species of spin 1/2, with the four 〈111〉 axes of the cubic lattice as the symmetry axes, has been observed by electron paramagnetic resonance in undoped, as-grown RuS2 single crystals. The g values at 10.8 K are g(parallel) =2.022±0.001 and g⊥ =2.088±0.001. The most probable origin of this paramagnetic species is an S− ion adjacent to an S vacancy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343431
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  • 10
    Electronic Resource
    Electronic Resource
    Determination of gap state density distribution in hydrogenated amorphous silicon from light-induced effects (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 1514-1516 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Gap state density distribution in hydrogenated amorphous silicon has been obtained from the effect of light illumination on the dark conductivity. This new technique allows us to determine the bulk density of state distribution within approximately 400 meV below the Fermi level.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339854
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