ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Chlorine Dioxide Treatment of Seafoods to Reduce Bacterial Loads (1999)
    Oxford, UK : Blackwell Publishing Ltd
    Journal of food science 64 (1999), S. 0 
    Details
    ISSN: 1750-3841
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition , Process Engineering, Biotechnology, Nutrition Technology
    Notes: Various seafoods were treated with fresh chlorine dioxide (ClO2) solutions (20, 40, 100, and 200 ppm total available ClO2) in 3.5% brine for 5 min, and bacterial loads and sensory quality were evaluated after 0, 3, and 7 d storage on ice. The ClO2 treated groups at each time period had lower bacterial counts than nontreated and brine-treated groups. The differences in bacterial counts were significant, especially for groups treated with 100 and 200 ppm ClO2. Treated ClO2 solutions contained very low or no bacterial loads. Treated red grouper and salmon with 100 or 200 ppm ClO2 developed skin discoloration (lighter color) and a chocolate color in the gills.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2621.1999.tb12288.x
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Amino acid sequence of a phosphorylation site in skeletal muscle glycogen synthetase
    Amsterdam : Elsevier
    Biochemical and Biophysical Research Communications 75 (1977), S. 643-650 
    Details
    ISSN: 0006-291X
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1016/0006-291X(77)91521-2
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Binding of protein kinase substrates by fluorescently labeled calmodulin
    Amsterdam : Elsevier
    Biochemical and Biophysical Research Communications 108 (1982), S. 266-272 
    Details
    ISSN: 0006-291X
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1016/0006-291X(82)91861-7
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Plasma current in tokamak conditions: An application of the guiding field line model (2000)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 7 (2000), S. 4095-4105 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new kinetic representation for the plasma current is examined for tokamak conditions. Within this representation, the periodic bounce motion is extracted from the guiding center motion of particles. The drift orbit of a guiding center is viewed as a closed loop stretched along the guiding field line—a field line that moves at the bounce-averaged drift rate. Because all quantities, including the distribution function, are defined not on the basis of the particle's guiding center, but rather on the basis of the guiding field line, an additional magnetization term appears, which corresponds to the wobbling deviation of the guiding center from the guiding field line. Thus, the current is decomposed into three terms: The flow of orbits as a whole, the gyro-magnetization, and bounce–wobble magnetization. The great advantage of the new model is that the zeroth-order distribution function, a nonshifted Maxwellian distribution, yields a current that satisfies the fluid equations. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1289891
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Interfacial reactions of Ni-In and Ni/In/Ni ohmic contacts to n-GaAs (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 299-305 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The metallurgical characteristics of codeposited Ni-In and sequentially deposited Ni/In/Ni ohmic contacts to n-GaAs with a total Ni:In atomic ratio of about 1 were investigated in this study. After annealing below 400 °C, only NiIn phase was detected and no interfacial reaction was observed in Ni-In contact, whereas NixGaAs phase was formed at the interface in Ni/In/Ni contact. An extensive interfacial reaction occurred and some epitaxial phases were formed after annealing at 400 °C and above. NiGa and InxGa1−xAs were the final main phases in both the contacts. Furthermore, both the contacts became ohmic after annealing at 400 °C and the above temperatures. The appearance of ohmic behavior was correlated with the formation of interfacial InxGa1−xAs. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360675
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Characteristics of β-phase PdAl Schottky contacts to n-GaAs (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 5739-5744 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Metallurgical and electrical properties of β-phase PdAl Schottky metallizations on n-GaAs after rapid thermal annealing for 20 s in the temperature range 500–1000 °C have been investigated using x-ray diffraction, transmission electron microscopy, Auger depth profiling, film resistivity, and current–voltage measurement. The Al-rich contacts were stable up to 900 °C whereas the Pd-rich contacts were less stable. The thermal stability of β-PdAl exhibited a sharp variation near the stoichiometric composition. The thermal stability of Pd-rich contacts decreased with increasing Pd composition, and the interfacial reaction after high-temperature annealing resulted in the formation of PdGa compound. The interface between Al-rich PdAl film and GaAs substrate remained quite sharp even after 900 °C anneal. The variation of interfacial stability at high temperatures between β-PdAl film and GaAs substrate is correlated to the compositional dependence of Al and Pd activities in PdAl within the β-phase region. The Schottky barrier heights of Al-rich PdAl contacts increased with annealing temperature. The barrier height enhancement in the annealed Al-rich contacts can be attributed to the thin AlxGa1−xAs layer formed at the interface. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359635
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Characteristics of Ta and Ta-Al alloy Schottky contacts to n-GaAs (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 7519-7525 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The metallurgical stability and the electrical characteristics of Ta and Ta-Al alloy metallizations on n-GaAs have been investigated. The compositions of electron-gun-evaporated alloy films were Ta55Al45, Ta37Al63, and Ta30Al70. The contacts were annealed by rapid thermal processing in the temperature range 400–900 °C for 20 s. X-ray diffraction, transmission electron microscopy, and Auger depth profiling analysis were used to study the structural properties. The sheet resistance and the electrical characteristics of the Schottky diodes were assessed using four-point probe and current-voltage measurements, respectively. The Ta-Al alloy metallizations were substantially more stable than pure Ta. The interfaces of Ta-Al/GaAs contacts were metallurgically stable and the surface remained smooth and lustrous up to 900 °C anneal, while interfacial reactions occurred and the surface became rough in Ta/GaAs contact after annealing above 600 °C. The Schottky barrier heights of all thermally stable Ta-Al/GaAs diodes increased with temperature after annealing above 700 °C. The variation of the electrical characteristics of the contacts as a function of annealing temperature can be correlated to the crystallization transformation of the film, and the interfacial diffusion and reaction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356625
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Interfacial reactions of Cr, Cr-Si, and Cr/Si films on GaAs (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 5675-5683 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Interfacial reactions of Cr, Cr-Si, and Cr/Si films on GaAs substrate, in the temperature range 200–800 °C, have been investigated using a combination of x-ray diffraction, transmission electron microscopy, Auger electron spectroscopy, and electrical measurements. Chromium starts to react with GaAs at 500 °C by formation of CrAs and Cr3Ga compounds. At 600 °C, Cr3Ga transforms to Cr3Ga4, and the reaction products are Cr3Ga4, CrGa4, and CrAs at 700–800 °C with CrGa4 and CrAs being the final dominant phases at 800 °C. The compounds formed are consistent with the phase diagram. The surface region of the reacted Cr films is richer in Cr-Ga compounds, while the interface region is richer in CrAs compound. The Schottky barrier heights of Cr/n-GaAs diodes increase after annealing at temperatures below 400 °C, however, the diodes deteriorate severely at higher temperatures. Annealing of the codeposited Cr-Si and layer-deposited Cr/Si films results in the formation of CrSi2 at temperatures above ∼600 °C. No interfacial reaction between CrSi2 film and GaAs was observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350184
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    High-temperature stable MoAl2.7/n-GaAs Schottky diodes with enhanced barrier height (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 3017-3019 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-temperature stable and smooth gate materials are required for self-aligned GaAs metal-semiconductor field effect transistor devices processing. Furthermore, the high Schottky barrier is beneficial to the GaAs digital logic circuits based on the enhancement mode field effect transistors. We report the high-temperature (up to 900 °C) stable MoAl2.7 Schottky contacts to n-GaAs with enhanced barrier heights from 0.67 to 0.98 V and low values of ideality factors after annealing. The surface of annealed contact is lustrous and smooth. The epitaxial AlxGa1−xAs layer, which induces the enhanced barrier height, at the interface of MoAl2.7/n-GaAs contact, has been clearly identified by the high-resolution cross-sectional transmission electron microscopy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107995
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Effect of proteases on the structure and activity of rabbit skeletal muscle glycogen synthetase
    Amsterdam : Elsevier
    FEBS Letters 98 (1979), S. 66-70 
    Details
    ISSN: 0014-5793
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0014-5793(79)80153-2
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...