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  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2192-2194 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report room-temperature lasing at 0.94–1.002 μm in high-finesse Fabry– Perot resonators with Inx Ga1−x As/GaAs multiple quantum well active layers (x=0.18–0.2). The quantum wells and AlAs/GaAs quarter-wave stack mirrors were epitaxially grown on GaAs substrates. Optically pumping with 0.875 μm, 10 ps pulses yielded a threshold of 15 pJ incident pulse energy. The equivalent threshold current density is about 26 μA/μm2 (2.6 kA/cm2 ), suggesting ultralow thresholds in micrometer-size devices. At the lasing wavelengths the GaAs substrates are essentially transparent allowing the possibility of integrating micro-optic lenslets on the substrate backsides for light collection. Nonlinear optical gating of 1.064 μm light was also achieved in these structures.
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 16-20 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Instability in the output of dc-biased surface emitting lasers due to an external cavity effect was observed. The output power spectrum exhibited multiple peaks with spacing corresponding to exactly the round-trip delay in silica fibers with length ranging from 2 m to 2 km. The magnitude of the peaks was enhanced in the spectral region centered at the laser relaxation frequency. With increased feedback, the background of the output spectrum was found to increase, indicating the presence of optical chaos. Numerical simulation based on the rate equation analysis was found to agree with the experiment, indicating the surface emitting lasers are well described by the rate equation and are susceptible to feedback as the edge emitting lasers.
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 2449-2452 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Influence of a thin protective but subsequently evaporated InAs layer on the regrowth of AlGaAs has been studied. It was found that although most of the InAs could be evaporated by thermal desorption, some would react with Al0.36Ga0.64As to form InAlGaAs. These InAlGaAs islands act as potential wells for carrier recombination and dominate the photoluminescence spectrum. Transmission electron microscopy photographs show that dislocations are formed near the islands. These defects are caused by lattice mismatch between AlGaAs and InAlGaAs. These islands and defects strongly affect the optical quality of surrounding Al0.36Ga0.64As and quantum wells.
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 424-426 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have achieved room-temperature pulsed and cw lasing at 980 nm in an optically pumped vertical cavity structure grown by molecular beam epitaxy containing only a single quantum well (SQW) of In0.2Ga0.8As. Limited gain due to the extremely short active material length of 80 A(ring) implies that losses due to absorption, scattering, and mirror transmission are extremely low. Using 10 ps pump pulses at 860 or 880 nm, the estimated energy density absorbed in the spacer was ∼12 fJ/μm2 at threshold, indicating a carrier density approximately four times that required for transparency. Continuous wave pumping yielded an estimated threshold absorbed intensity of ∼7 μW/μm2.
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2026-2028 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Intense single-peak photoluminescences of free-exciton origin were observed in InxGa1−x As/GaAs strained-layer quantum wells with x ranging from 0.09 to 0.20. Band lineups in these strained-layer heterostructures were determined by the dependence of luminescence energy on the well thickness. The heterojunction discontinuity in the heavy hole valence bands was found to be about 30% of the gap difference and independent of x. Exciton-phonon coupling was determined by temperature-dependent absorption measurements and the coupling strength was found to be similar to that of unstrained GaAs/AlxGa1−x As quantum wells.
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 5629-5631 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe vertical cavity surface emitting lasers of GaAs active regions (0.7 μm thick) emitting at 0.85 μm and of In0.1Ga0.9As-GaAs active regions emitting at 0.90 μm. The vertical cavity is formed using an AlxGa1−xAs-AlAs quarter-wave stack as the n-type mirror and the metal Ag as the p-type mirror. The Ag mirror has potential for reduced series resistance, reduced thermal resistance, and more simplified device processing over other mirror structures for vertical cavity laser diodes. Current thresholds for pulsed room-temperature operation as low as 16 kA/cm2 for the GaAs and 51 kA/cm2 for the In0.1Ga0.9As-GaAs devices have been measured.
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 3504-3506 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A two-color infrared detector using GaAs/AlGaAs and strained InGaAs/AlGaAs multiquantum wells is demonstrated. The response peak of the GaAs/AlGaAs quantum well is at 8 μm, and that of the InGaAs/AlGaAs quantum well is at 5.3 μm. The responsivity of the detector is 1 A/W at 8 μm and 0.27 A/W at 5.3 μm; these are the best values reported for a two-color quantum well infrared detectors (QWIPs) with peak sensitivities in the spectral regions of 3–5.3 μm and 7.5–14 μm. Single-colored 5.3 and 8 μm QWIPs were also fabricated to study the bias dependent behavior. This behavior can be explained using the concept of current continuity. Because of a higher electrical resistance, a high electric field domain is always formed first in the shorter wavelength quantum well stack.
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2624-2626 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transverse mode emission characteristics of gain-guided surface emitting lasers at 0.85 μm were investigated. Up to six nondegenerate circularly symmetrical modes were observed with detunings between the adjacent modes around 2.5 A(ring). Numerical simulations were performed. The calculated beam sizes, difference of modal gains to account for the side mode suppression ratio when operated with one dominant mode, and wavelength detunings agreed with experiments. Numerical simulations also predict that the mirror loss due to Gaussian beam diffraction is nonnegligible for the 1.3–1.55 μm devices.
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  • 9
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Thin Solid Films 151 (1987), S. 145-152 
    ISSN: 0040-6090
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
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  • 10
    ISSN: 1573-4943
    Keywords: Crotalid snakes ; fibrinogenases ; factors IX/X-binding proteins ; thrombin-like serine proteases ; botrocetin ; platelet agglutination ; von Willebrand factor
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Abstract One novel venom factor was isolated and purified from the venom of Taiwan habu (Trimeresurus mucrosquamatus) using two consecutive anion-exchange and gel-filtration chromatographies followed by cation-exchange HPLC. Further characterization of the purified protein indicated that it lacks the proteolytic activity toward fibrinogen molecules, suggesting that this protein factor does not belong to the familes of metalloproteinases and thrombin-like serine proteases commonly found in the crude venoms of various crotalid snakes. The purified protein exists as a native dimeric protein of 26 kDa, consisting of two closely similar subunits of 16 and 13 kDa, held together by disulfide linkage. N-Terminal sequence analysis revealed that both chains are homologous to each other at the N-terminal fragment and also similar to the factors IX/X-binding protein isolated fromTrimeresurus flavoviridis and botrocetin fromBothrops jararaca. This study points to the existence of one new two-chain venom factor without fibrinogenase activity from Taiwan habu, which, in contrast to botrocetin, promotes platelet agglutination even in the absence of von Willebrand factor. Unlike factors IX/X-binding proteins, it did not show affinity to coagulation factors IX and X in the presence of Ca2+ ion. It also shows no inhibition on thrombin, in contrast with bothrojaracin, a thrombin inhibitor isolated fromBothrops jararaca venom. We have therefore named this novel venom factortrimecetin to distinguish it from some structurally related venom factors present in various crotalid and viperid snakes.
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